In order to research nonlinear absorption effect of pulse laser irradiation for GaAs, a physical model of Gaussian distribution pulse laser irradiation for semiconductor material was established by software COMSOL Multiphysics. The thermal effects of semiconductor material GaAs was
analyzed under irradiation of nanosecond pulse laser with wavelength of 1064 nm. The radial and transverse temperature distribution of semiconductor material GaAs was calculated under irradiation of nanosecond pulse laser with different power density by solving the thermal conduction equations.
The contribution of one-photon absorption, two-photon absorption and free carrier absorption to temperature of GaAs material were discussed. The results show that when the pulse laser power density rises to 1010 W/cm2, free carrier absorption played a leading role and
it was more than that of one-photon absorption of material. The temperature contribution of two-photon absorption and free carrier absorption could be ignored at laser power density lower than 108 W/cm2.The result is basically consistent with relevant experiments, which
shows that physical model constructed is valid.
Nitrogen assisted formation of large-area ripples on Ti6Al4V surface by nanosecond pulse laser irradiation
