High-Performance Indium–Gallium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide
2019 ◽
Vol 32
◽
pp. 729-733
◽
Abdelhafid Marroun
◽
Naima Amar Touhami
◽
Taj-eddin El Hamadi
◽
Moustapha El Bakkali
2011 ◽
Vol 58
(5)
◽
pp. 1452-1455
◽
Linfeng Lan
◽
Junbiao Peng
2014 ◽
Vol 53
(4S)
◽
pp. 04EF07
◽
Yu Tian
◽
Dedong Han
◽
Suoming Zhang
◽
Fuqing Huang
◽
Dongfang Shan
◽
...
2012 ◽
Vol 520
(16)
◽
pp. 5455-5458
◽
C.J. Chiu
◽
S.P. Chang
◽
S.J. Chang
2008 ◽
Vol 93
(8)
◽
pp. 082102
◽
Wantae Lim
◽
Jung Hun Jang
◽
S.-H. Kim
◽
D. P. Norton
◽
V Craciun
◽
...
2018 ◽
Vol 18
(9)
◽
pp. 1080-1086
◽
Min-Soo Kang
◽
Won-Ju Cho
2011 ◽
Vol 32
(1)
◽
pp. 42-44
◽
Longyan Yuan
◽
Xiao Zou
◽
Guojia Fang
◽
Jiawei Wan
◽
Hai Zhou
◽
...
2014 ◽
Vol 105
(24)
◽
pp. 249902
Pradipta K. Nayak
◽
M. N. Hedhili
◽
Dongkyu Cha
◽
H. N. Alshareef
2011 ◽
Vol 21
(43)
◽
pp. 17066
◽
Sunho Jeong
◽
Ji-Yoon Lee
◽
Sun Sook Lee
◽
Se-Wook Oh
◽
Hyun Ho Lee
◽
...
2017 ◽
Vol 17
(5)
◽
pp. 3401-3405
◽
Cheol-Min Lim
◽
Won-Ju Cho