High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors With $\hbox{HfO}_{x}\hbox{N}_{y}/\hbox{HfO}_{2}/\hbox{HfO}_{x}\hbox{N}_{y}$ Tristack Gate Dielectrics
2011 ◽
Vol 32
(1)
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pp. 42-44
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2014 ◽
Vol 53
(4S)
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pp. 04EF07
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Keyword(s):
2011 ◽
Vol 58
(5)
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pp. 1452-1455
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2011 ◽
Vol 21
(43)
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pp. 17066
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Keyword(s):