Study on the response and recovery properties of semiconductor gas sensors using a high-speed gas-switching system

2008 ◽  
Vol 134 (2) ◽  
pp. 928-933 ◽  
Author(s):  
Tetsuya Kida ◽  
Toru Kuroiwa ◽  
Masayoshi Yuasa ◽  
Kengo Shimanoe ◽  
Noboru Yamazoe
Keyword(s):  
Gas Sensors ◽  
High Speed ◽  
Switching System ◽  
Response And Recovery ◽  
Semiconductor Gas Sensors

Semiconductor gas sensors

2013 ◽  
Author(s):  
Raivo Jaaniso ◽  
Ooi Kiang Tan
Keyword(s):  
Gas Sensors ◽  
Semiconductor Gas Sensors

Fabrication and Properties Study of the Dielectric Membranes Used as Constructive Basis for Sensitive Elements of Gas Sensors

2015 ◽  
Vol 799-800 ◽  
pp. 994-997 ◽  
Author(s):  
Denis Veselov
Keyword(s):  
Magnetron Sputtering ◽  
Qualitative Analysis ◽  
Gas Sensors ◽  
Silicon Oxide ◽  
Alkaline Solutions ◽  
Reactive Magnetron ◽  
Membrane Structures ◽  
Two Stage ◽  
Study Results ◽  
Semiconductor Gas Sensors

The article presents the properties study results of the dielectric membranes for sensitive elements of semiconductor gas sensors, obtained by different modes of the reactive magnetron sputtering of silicon with application of the two-stage unilateral anisotropic etching of silicon in the organic alkaline solutions. The qualitative analysis of the membranes stability to destructions and deformations in the course of their fabrication and heating is given. Optimum structures and modes of films formation for dielectric membrane structures are determined. The admissible thickness of the thermal silicon oxide underlay, which is does not promote to considerable membranes deformations in the course of their fabrication and heating, is identified.

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