Superior silicon surface passivation in HIT solar cells by optimizing a-SiOx:H thin films: A compact intrinsic passivation layer

Solar Energy ◽  
2017 ◽  
Vol 155 ◽  
pp. 670-678 ◽  
Author(s):  
Bin Zhang ◽  
Yu Zhang ◽  
Ridong Cong ◽  
Yun Li ◽  
Wei Yu ◽  
...  
2011 ◽  
Vol 32 (3) ◽  
pp. 369-371 ◽  
Author(s):  
Chao-Jung Chen ◽  
Ruey-Lue Wang ◽  
Yan-Kuin Su ◽  
Ting-Jen Hsueh

2017 ◽  
Vol 110 (8) ◽  
pp. 083904 ◽  
Author(s):  
Jianhui Chen ◽  
Yanjiao Shen ◽  
Jianxin Guo ◽  
Bingbing Chen ◽  
Jiandong Fan ◽  
...  

2009 ◽  
Vol 517 (12) ◽  
pp. 3456-3460 ◽  
Author(s):  
J.J.H. Gielis ◽  
B. Hoex ◽  
P.J. van den Oever ◽  
M.C.M. van de Sanden ◽  
W.M.M. Kessels

Author(s):  
S.N. Abolmasov ◽  
A.S. Abramov ◽  
A.V. Semenov ◽  
I.S. Shakhray ◽  
E.I. Terukov ◽  
...  

AbstractAttenuated total reflection Fourier transform infrared (ATR FTIR) spectroscopy and effective lifetime measurements have been used to characterize amorphous/crystalline silicon surface passivation in silicon heterojunction solar cells. The comparative studies show a strong link between microstructure factor R * and effective lifetime of amorphous silicon ( a -Si:H) passivation layers incorporating an interface buffer layer, which prevents the epitaxial growth. It is demonstrated that thin a -Si:H films deposited on glass can be used as ATR substrates in this case. The obtained results show that a -Si:H films with R * close to 0.1 are required for manufacturing of high-efficiency (>23%) silicon heterojunction solar cells.


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