Early stage growth mechanisms of CdTe thin films deposited by close space sublimation for solar cells

2011 ◽  
Vol 95 (12) ◽  
pp. 3165-3170 ◽  
Author(s):  
J.D. Major ◽  
K. Durose
2007 ◽  
Vol 515 (15) ◽  
pp. 5828-5832 ◽  
Author(s):  
J.D. Major ◽  
Y.Y. Proskuryakov ◽  
K. Durose ◽  
S. Green

2011 ◽  
Vol 209 (2) ◽  
pp. 272-276 ◽  
Author(s):  
T. Potlog ◽  
N. Spalatu ◽  
N. Maticiuc ◽  
J. Hiie ◽  
V. Valdna ◽  
...  

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
A. Gonzalez-Cisneros ◽  
F. L. Castillo-Alvarado ◽  
J. Ortiz-Lopez ◽  
G. Contreras-Puente

In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compoundCdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimentalC-V(capacitance versus voltage) characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010). The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film) and the close-spaced vapor transport (for CdTe film) techniques.


2012 ◽  
Vol 1432 ◽  
Author(s):  
Jonathan D. Major ◽  
Leon Bowen ◽  
Robert E. Treharne ◽  
Ken Durose

ABSTRACTTwo issues relating to the determination of junction position in thin film CdTe solar cells have been investigated. Firstly, the use of a focussed ion beam (FIB) milling as a method of sample preparation for electron beam induced current (EBIC) analysis is demonstrated. It is superior to fracturing methods. High quality secondary electron and combined secondary electron/EBIC images are presented and interpreted for solar cells with CdTe layers deposited by both close space sublimation (CSS) or RF sputtering. Secondly, it was shown that in an RF-sputtered CdTe device, while the photovoltaic junction was buried ~1.1 μm from the metallurgical interface, the shape of the external quantum efficiency (EQE) curve did not indicate the presence of a buried homo-junction. SCAPS modelling was used to verify that EQE curve shapes are not sensitive to junctions buried < 1.5μm from the CdTe/CdS interface.


2021 ◽  
Vol 130 (16) ◽  
pp. 163104
Author(s):  
Mohammad M. Taheri ◽  
Triet M. Truong ◽  
Siming Li ◽  
William N. Shafarman ◽  
Brian E. McCandless ◽  
...  

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