Dynamic FPAA-based Mixed-Signal Processing Circuit for Thin-Film CdTe/Lead-Free Perovskite Photodetectors

New photodetector structure combining thinned CdTe film with lead-free perovskite photoelectric film was produced and investigated. This setting of the CdTe thickness results in photodetector parameters’ competitiveness to the state-of-the-art in the field of advanced photoelectric materials. The device shows a promising sensitivity of ~40 μA/W, maximum responsivity of 10.6 mA/W at 460 nm, equal rise and fall times of 30 ms, and high linearity (maximum linearization error is less than 0.6 %). However, the optoelectronic performance of CdTe/lead-free perovskite structures integrated with signal processing circuit remains unexplored. For this purpose, Field Programmable Analogue Array (FPAA)-based mixed-signal processing circuit is developed for pulse width modulated electrical signal with duty cycle controlled by the illumination degree of the detecting photoelement. This novel approach guarantees a smooth change of the electrical output at a smooth change of the input illumination between the light and dark switching states and can be practically applied as a precise position detector of moving objects. The paper represents a synergistic connection between microelectronics, electronics, and signal technology.

Impact of CdCl2 Treatment in CdTe Thin Film Grown on Ultra-Thin Glass Substrate via Close Spaced Sublimation

In this study, close-spaced sublimation (CSS) grown cadmium telluride (CdTe) thin films with good adhesion to 100 µm thin Schott D263T ultra-thin glass (UTG) were investigated. Cadmium chloride (CdCl2) treatment in vacuum ambient was executed to enhance the film quality and optoelectrical properties of CdTe thin film. The post-deposition annealing temperature ranging from 360–420 °C was examined to improve the CdTe film quality on UTG substrate. Various characterization techniques have been used to observe the compositional, morphological, optical, as well as electrical properties. Scanning electron microscopy (SEM) verified that the CdTe morphology and grain size could be controlled via CdCl2 treatment temperature. Energy Dispersive X-Ray Analysis (EDX) results confirmed that the annealing temperature range of 375–390 °C yielded the stoichiometric CdTe films. UV-Vis analysis estimated the post-treatment bandgap energy in the range of 1.39–1.46 eV. Carrier concentration and resistivity were obtained in the order of 1013 cm−3 and 104 Ω-cm, respectively. All the experimental results established that the CdCl2 treatment temperature range of 390–405 °C might be considered as the optimum process temperature for the deposition of CdTe solar cell on UTG substrate in close-spaced sublimation (CSS) method.

Effects of Temperature on Morphological, Structural and Optical Characteristics of CdTe Films for PV Applications

Cadmium telluride (CdTe) is a direct band gap semiconductor for direct light-to-electricity conversion. The films are promising photovoltaic materials for CdS/CdTe solar cells because of its energy band gap of 1.5 eV and higher absorption co-efficient (>104cm-1). This work presents the characterization of 1 μm CdTe films for photovoltaic applications. The films were deposited on cleaned glass substrates using thermal evaporation. The effect of annealing temperatures (as deposited, 400°C and 500°C) on morphological, structural and optical characteristics of CdTe films was investigated for an hour and characterized with Scanning Electron Microscope (SEM), Powder X-ray diffraction (PXRD) and UV-Visible spectrophotometer. The results revealed that the reflectance characteristics of CdTe films depend on the wavelength of electromagnetic spectra. The maximum percentage optical transmittance of CdTe films for as-grown, 400°C and 500oC films were 59%, 60% and 58% respectively at 800 nm wavelength. The absorbance decreases with increasing in wavelength and was found to be 1.65, 1.25 and 0.85 % for the as-grown, 400°C and 500oC films respectively. The absorption coefficient exhibits higher values in the shorter wavelength and decreases as the wavelength and temperatures increases and the band gap becomes wider. The SEM analyses showed that the films were homogenous and free from crystal defects. The results revealed that 1 μm CdTe film may be used as absorber layer in CdS/CdTe thin film solar cells. Keywords: CdTe, Glass substrate, Thermal evaporation, Annealing temperature, Energy band gap

Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment

The deposition of thin Cadmium Telluride (CdTe) layers was performed by a chamberless metalorganic chemical vapour deposition process, and trends in growth rates were compared with computational fluid dynamics numerical modelling. Dimethylcadmium and diisopropyltelluride were used as the reactants, released from a recently developed coating head orientated above the glass substrate (of area 15 × 15 cm2). Depositions were performed in static mode and dynamic mode (i.e., over a moving substrate). The deposited CdTe film weights were compared against the calculated theoretical value of the molar supply of the precursors, in order to estimate material utilisation. The numerical simulation gave insight into the effect that the exhaust’s restricted flow orifice configuration had on the deposition uniformity observed in the static experiments. It was shown that > 59% of material utilisation could be achieved under favourable deposition conditions. The activation energy determined from the Arrhenius plot of growth rate was ~ 60 kJ/mol and was in good agreement with previously reported CdTe growth using metalorganic chemical vapour deposition (MOCVD). Process requirements for using a chamberless environment for the inline deposition of compound semiconductor layers were presented.