High open-circuit voltage (1.04 V) n–i–p type thin film silicon solar cell by two-phase silicon carbide intrinsic material

2014 ◽  
Vol 130 ◽  
pp. 561-566 ◽  
Author(s):  
Jun Ma ◽  
Jian Ni ◽  
JianJun Zhang ◽  
Qun Liu ◽  
XinLiang Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Two Phase ◽  
Thin Film Silicon ◽  
P Type

scholarly journals MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

2014 ◽  
Vol 2014 ◽  
pp. 1-7
Author(s):  
Amornrat Limmanee ◽  
Patipan Krudtad ◽  
Sasiwimon Songtrai ◽  
Suttinan Jaroensathainchok ◽  
Taweewat Krajangsang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Silicon Solar Cell ◽  
Open Circuit ◽  
Textured Surface ◽  
Solar Cell Application ◽  
Thin Film Silicon ◽  
Back Reflector ◽  
Screen Printed

We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc) and low fill factor (FF); however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H) film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% withVoc=0.86 V,Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2). The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

A p-Type NiO-Based Dye-Sensitized Solar Cell with an Open-Circuit Voltage of 0.35 V

2009 ◽  
Vol 48 (24) ◽  
pp. 4402-4405 ◽  
Author(s):  
Elizabeth A. Gibson ◽  
Amanda L. Smeigh ◽  
Loïc Le Pleux ◽  
Jérôme Fortage ◽  
Gerrit Boschloo ◽  
...  
Keyword(s):  
Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Dye Sensitized Solar Cell ◽  
Dye Sensitized ◽  
P Type

scholarly journals Analysis of Losses in Open Circuit Voltage for an 18-μm Silicon Solar Cell

2015 ◽  
Vol 5 (4) ◽  
pp. 682-694 ◽  
Author(s):  
Lu Wang ◽  
Jianshu Han ◽  
Anthony Lochtefeld ◽  
Andrew Gerger ◽  
Allen Barnett
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit

Case study of failure analysis in thin film silicon solar cell

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1800-1803 ◽  
Author(s):  
D. Mello ◽  
R. Ricciari ◽  
A. Battaglia ◽  
M. Foti ◽  
C. Gerardi
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Failure Analysis ◽  
Silicon Solar Cell ◽  
Thin Film Silicon

scholarly journals Investigations on the Outdoor Performance Characteristics of Multicrystalline Silicon Solar Cell and Module

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
Sivakumar Parthasarathy ◽  
P. Neelamegam ◽  
P. Thilakan ◽  
N. Tamilselvan
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Critical Value ◽  
Standard Test ◽  
Open Circuit ◽  
Multicrystalline Silicon ◽  
In Series

Multicrystalline silicon solar cell and its module with 18 cells connected in series were mounted on an inclined rack tilted 12° South positioned at latitude of 12.0107° and longitude of 79.856°. Corresponding solar irradiance was measured using an optical Pyranometer. Measured irradiance, open circuit voltage (), and short circuit current () values were analyzed. values of both the cell and module were found saturated at above the critical value of illuminations which were different from each other. The integrated daily efficiency for the cell and module were ~10.25% and ~9.39%, respectively, that were less than their respective standard test condition’s value. The reasons for this drop in efficiencies were investigated and reported.

Deposition of P-Type Nanocrystalline Silicon Using High Pressure in a VHF-PECVD Single Chamber System

2011 ◽  
Vol 1321 ◽  
Author(s):  
Xiaodan Zhang ◽  
Guanghong Wang ◽  
Xinxia Zheng ◽  
Shengzhi Xu ◽  
Changchun Wei ◽  
...  
Keyword(s):  
High Pressure ◽  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Nanocrystalline Silicon ◽  
Open Circuit ◽  
Single Chamber ◽  
P Type

ABSTRACTIn this article, we present a study of boron-doped hydrogenated nanocrystalline silicon (nc-Si: H) films by very high frequency-plasma enhanced chemical vapor deposition (VHF-PECVD) using high deposition pressure. Electrical, structural and optical properties of the films were investigated. Dark conductivity as high as 2.75S/cm of p-type nc-Si: H prepared at 2.5Torr pressure has been achieved at a deposition rate of 1.75Å/s for 25nm thin film. By controlling boron and phosphorus contamination, single junction nc-Si: H solar cells incorporated p-layers prepared under high pressure and low pressure, respectively, were deposited. It has been proven that nanocrystalline silicon solar cells with incorporation of p layer prepared at high pressure has resulted in enhanced open circuit voltage, short circuit current density and subsequently high conversion efficiency. Through the optimization of the bottom solar cell and application of ZnO/Al back reflector, 10.59% initial conversion efficiency of micromorph tandem solar cell (1.027cm2) with an open circuit voltage of 1.3864V, has been fabricated, where the bottom solar cell using a high pressure p layer was deposited in a single chamber.

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