Improved two-step photon absorption current by Cl-doping in ZnTeO-based intermediate band solar cells with n-ZnS layer

2022 ◽  
Vol 235 ◽  
pp. 111456
Author(s):  
Tooru Tanaka ◽  
Shuji Tsutsumi ◽  
Katsuhiko Saito ◽  
Qixin Guo ◽  
Kin Man Yu
2018 ◽  
Vol 74 (1) ◽  
pp. 51-58 ◽  
Author(s):  
Zahra Arefinia

AbstractFor the first time, the formalism of intrinsic loss processes such as below-band gap, thermalisation, angle mismatch, Carnot and emission loss in the intermediate band solar cells (SCs) is obtained by a theoretical framework based on the principle of detailed balance approach, and with the physical origins of losses discussed in terms of photon absorption and emission in the presence of intermediate energy band (IB). Then, the effect of IB position on each intrinsic loss in the intermediate band SCs is investigated. The results show that the introduction of IB reduces the below-band gap loss due to absorption of low energy photons by narrower sub-band gap and reduces the thermalisation loss due to absorption of high energy photons by the band gap of host semiconductor. Furthermore, the thermalisation and angle mismatch losses are dominant fractions of intrinsic loss, while the emission loss presents less than 2.2 % of intrinsic loss.


Author(s):  
Juan Villa ◽  
Inigo Ramiro ◽  
Jose Maria Ripalda ◽  
Ignacio Tobias ◽  
Pablo Garcia-Linares ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 344
Author(s):  
Yasushi Shoji ◽  
Ryo Tamaki ◽  
Yoshitaka Okada

From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs). In IBSCs, current generation via two-step optical excitations through the intermediate band is the key to the operating principle. This mechanism requires the formation of a strong quantum confinement structure. Therefore, we focused on the material system with GaSb quantum nanostructures embedded in AlGaAs layers. However, studies involving crystal growth of GaSb quantum nanostructures on AlGaAs layers have rarely been reported. In our work, we fabricated GaSb quantum dots (QDs) and quantum rings (QRs) on AlGaAs layers via molecular-beam epitaxy. Using the Stranski–Krastanov growth mode, we demonstrated that lens-shaped GaSb QDs can be fabricated on AlGaAs layers. In addition, atomic force microscopy measurements revealed that GaSb QDs could be changed to QRs under irradiation with an As molecular beam even when they were deposited onto AlGaAs layers. We also investigated the suitability of GaSb/AlGaAs QDSCs and QRSCs for use in IBSCs by evaluating the temperature characteristics of their external quantum efficiency. For the GaSb/AlGaAs material system, the QDSC was found to have slightly better two-step optical excitation temperature characteristics than the QRSC.


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