Effect of graded triple delta-doped sheets on the performance of GaAs based dual channel pseudomorphic high electron mobility transistors

High Electron ◽

High Electron Mobility ◽

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.4972225 ◽

2016 ◽

Vol 120 (23) ◽

pp. 235704 ◽

Cited By ~ 4

Author(s):

David A. Deen ◽

Ross A. Miller ◽

Andrei V. Osinsky ◽

Brian P. Downey ◽

David F. Storm ◽

...

Keyword(s):

Surface Potential ◽

Electron Mobility ◽

High Electron ◽

Debye Screening ◽

High Electron Mobility ◽

Potential Fluctuations ◽

Comprehensive study of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors

Solid-State Electronics ◽

10.1016/j.sse.2011.09.009 ◽

2012 ◽

Vol 72 ◽

pp. 22-28 ◽

Cited By ~ 6

Author(s):

Kuei-Yi Chu ◽

Shiou-Ying Cheng ◽

Meng-Hsueh Chiang ◽

Yi-Jung Liu ◽

Chien-Chang Huang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Dual Channel ◽

Comprehensive Study

IEEE. APCCAS 1998. 1998 IEEE Asia-Pacific Conference on Circuits and Systems. Microelectronics and Integrating Systems. Proceedings (Cat. No.98EX242) ◽

A simple DC model for dual channel high electron mobility transistors

10.1109/apccas.1998.743938 ◽

2002 ◽

Author(s):

V. Kasemsuwan

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

A small signal model for dual channel high electron mobility transistors

Proceedings of 1994 37th Midwest Symposium on Circuits and Systems ◽

10.1109/mwscas.1994.519384 ◽

2002 ◽

Author(s):

R. Gupta ◽

M. El Nokali

Keyword(s):

Electron Mobility ◽

High Electron ◽

Small Signal ◽

Signal Model ◽

High Electron Mobility ◽

Dual Channel ◽

Small Signal Model

A model for dual-channel high electron mobility transistors

Solid-State Electronics ◽

10.1016/0038-1101(94)e0069-q ◽

1995 ◽

Vol 38 (1) ◽

pp. 51-57 ◽

Cited By ~ 15

Author(s):

Ravi Gupta ◽

M. El Nokali

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4935223 ◽

2015 ◽

Vol 107 (19) ◽

pp. 193506 ◽

Cited By ~ 36

Author(s):

M. Ťapajna ◽

O. Hilt ◽

E. Bahat-Treidel ◽

J. Würfl ◽

J. Kuzmík

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated with Indium-Tin-Oxide Electrodes

IEEE Electron Device Letters ◽

10.1109/led.2020.3048009 ◽

2020 ◽

pp. 1-1

Author(s):

Chih-Yao Chang ◽

Chun-Ta Hsu ◽

Yao-Luen Shen ◽

Tian-Li Wu ◽

Wei-Hung Kuo ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Oxide Electrodes

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

Solid-State Electronics ◽

10.1016/j.sse.2021.108050 ◽

2021 ◽

pp. 108050

Author(s):

Maria Glória Caño de Andrade ◽

Luis Felipe de Oliveira Bergamim ◽

Braz Baptista Júnior ◽

Carlos Roberto Nogueira ◽

Fábio Alex da Silva ◽

...

Keyword(s):

Electron Mobility ◽

Low Frequency ◽

Frequency Noise ◽

High Electron ◽

Low Frequency Noise ◽

High Electron Mobility ◽

Electron Mobility Transistors

Improved small‐signal hybrid parameter‐extraction technique for AlGaN / GaN high electron mobility transistors

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22562 ◽

2021 ◽

Author(s):

Xuekun Du ◽

Mohamed Helaoui ◽

Jialin Cai ◽

Jun Liu ◽

Fadhel M. Ghannouchi

Keyword(s):

Electron Mobility ◽

Parameter Extraction ◽

Extraction Technique ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors

GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs)

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106109 ◽

2021 ◽

Vol 135 ◽

pp. 106109

Author(s):

Debaleen Biswas ◽

Takuya Tsuboi ◽

Takashi Egawa

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

Double Quantum ◽

High Electron ◽

High Electron Mobility ◽

Double Quantum Well ◽

Gate Structure ◽

Gan On Si