Improved small‐signal hybrid parameter‐extraction technique for AlGaN / GaN high electron mobility transistors

2021 ◽  
Author(s):  
Xuekun Du ◽  
Mohamed Helaoui ◽  
Jialin Cai ◽  
Jun Liu ◽  
Fadhel M. Ghannouchi
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Parameter Extraction ◽  
Extraction Technique ◽  
High Electron ◽  
Small Signal ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

AlGaN/GaN High Electron Mobility Transistors on Si/SiO2/poly-SiC Substrates

2006 ◽  
Vol 955 ◽  
Author(s):  
Travis Anderson ◽  
Fan Ren ◽  
Lars Voss ◽  
Mark Hlad ◽  
Brent P Gila ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Parameter Extraction ◽  
High Electron ◽  
High Electron Mobility ◽  
Drain Spacing ◽  
Electron Mobility Transistors ◽  
Algan Barrier ◽  
Rf Performance ◽  
Spacing Parameter

ABSTRACTThe dc and rf performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown by Molecular Beam Epitaxy on Si-on-poly (SopSiC) substrates is reported. The HEMT structure incorporated a 7 period GaN/AlN superlattice between the AlGaN barrier and GaN channel for improved carrier confinement. The knee voltage of devices with 2 μm gate-drain spacing was 2.12 V and increased to 3 V at 8 μm spacing. The maximum frequency of oscillation, fMAX, was ∼40 GHz for devices with 0.5 μm gate length and 2 μm gate-drain spacing. Parameter extraction from the measured rf characteristics showed a maximum intrinsic transconductance of 143 mS.mm−1.

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