GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs)

2021 ◽  
Vol 135 ◽  
pp. 106109
Author(s):  
Debaleen Biswas ◽  
Takuya Tsuboi ◽  
Takashi Egawa
Keyword(s):  
Quantum Well ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Double Quantum ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Double Quantum Well ◽  
Gate Structure ◽  
Gan On Si

Study on the charging current of surface traps in AlGaN/GaN high electron mobility transistors with a slot gate structure

2019 ◽  
Vol 115 (15) ◽  
pp. 152105 ◽  
Author(s):  
Qirui Cao ◽  
Jinyan Wang ◽  
Mengjun Li ◽  
Hongyue Wang ◽  
Qianqian Tao ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gate Structure ◽  
Charging Current

Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors

2012 ◽  
Vol 5 (3) ◽  
pp. 034103
Author(s):  
Farid Medjdoub ◽  
Damien Ducatteau ◽  
Malek Zegaoui ◽  
Bertrand Grimbert ◽  
Nathalie Rolland ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Confinement ◽  
Electron Mobility Transistors ◽  
Gan On Si ◽  
Trapping Effects

InAlSb/InAs/AlGaSb Quantum Well Heterostructures for High-Electron-Mobility Transistors

2007 ◽  
Vol 36 (2) ◽  
pp. 99-104 ◽  
Author(s):  
Brian R. Bennett ◽  
J. Brad Boos ◽  
Mario G. Ancona ◽  
N. A. Papanicolaou ◽  
Graham A. Cooke ◽  
...  
Keyword(s):  
Quantum Well ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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