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Comprehensive study of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors
Solid-State Electronics
◽
10.1016/j.sse.2011.09.009
◽
2012
◽
Vol 72
◽
pp. 22-28
◽
Cited By ~ 6
Author(s):
Kuei-Yi Chu
◽
Shiou-Ying Cheng
◽
Meng-Hsueh Chiang
◽
Yi-Jung Liu
◽
Chien-Chang Huang
◽
...
Keyword(s):
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
◽
High Electron Mobility
◽
Electron Mobility Transistors
◽
Dual Channel
◽
Comprehensive Study
Download Full-text
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References
Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors
Journal of Applied Physics
◽
10.1063/1.4972225
◽
2016
◽
Vol 120
(23)
◽
pp. 235704
◽
Cited By ~ 4
Author(s):
David A. Deen
◽
Ross A. Miller
◽
Andrei V. Osinsky
◽
Brian P. Downey
◽
David F. Storm
◽
...
Keyword(s):
Surface Potential
◽
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
◽
Debye Screening
◽
High Electron Mobility
◽
Potential Fluctuations
◽
Electron Mobility Transistors
◽
Dual Channel
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Effect of graded triple delta-doped sheets on the performance of GaAs based dual channel pseudomorphic high electron mobility transistors
Superlattices and Microstructures
◽
10.1016/j.spmi.2011.07.005
◽
2011
◽
Vol 50
(4)
◽
pp. 289-295
Author(s):
Kuei-Yi Chu
◽
Shiou-Ying Cheng
◽
Meng-Hsueh Chiang
◽
Yi-Jung Liu
◽
Chien-Chang Huang
◽
...
Keyword(s):
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
◽
High Electron Mobility
◽
Electron Mobility Transistors
◽
Dual Channel
Download Full-text
Comprehensive study of components affecting extrinsic transconductance in In0.7Ga0.3As quantum-well high-electron-mobility transistors for image sensor applications
Journal of Sensor Science and Technology
◽
10.46670/jsst.2021.30.6.441
◽
2021
◽
Vol 30
(6)
◽
pp. 441-445
Author(s):
Seung-Won Yun
◽
Dae-Hyun Kim
Keyword(s):
Quantum Well
◽
Electron Mobility
◽
High Electron Mobility Transistors
◽
Image Sensor
◽
High Electron
◽
High Electron Mobility
◽
Sensor Applications
◽
Electron Mobility Transistors
◽
Comprehensive Study
Download Full-text
A simple DC model for dual channel high electron mobility transistors
IEEE. APCCAS 1998. 1998 IEEE Asia-Pacific Conference on Circuits and Systems. Microelectronics and Integrating Systems. Proceedings (Cat. No.98EX242)
◽
10.1109/apccas.1998.743938
◽
2002
◽
Author(s):
V. Kasemsuwan
Keyword(s):
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
◽
High Electron Mobility
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A small signal model for dual channel high electron mobility transistors
Proceedings of 1994 37th Midwest Symposium on Circuits and Systems
◽
10.1109/mwscas.1994.519384
◽
2002
◽
Author(s):
R. Gupta
◽
M. El Nokali
Keyword(s):
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
◽
Small Signal
◽
Signal Model
◽
High Electron Mobility
◽
Electron Mobility Transistors
◽
Dual Channel
◽
Small Signal Model
Download Full-text
A model for dual-channel high electron mobility transistors
Solid-State Electronics
◽
10.1016/0038-1101(94)e0069-q
◽
1995
◽
Vol 38
(1)
◽
pp. 51-57
◽
Cited By ~ 15
Author(s):
Ravi Gupta
◽
M. El Nokali
Keyword(s):
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
◽
High Electron Mobility
◽
Electron Mobility Transistors
◽
Dual Channel
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Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors
2018 IEEE International Reliability Physics Symposium (IRPS)
◽
10.1109/irps.2018.8353581
◽
2018
◽
Author(s):
K. Mukherjee
◽
F. Darracq
◽
A. Curutchet
◽
N. Malbert
◽
N. Labat
Keyword(s):
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
◽
Gate Leakage
◽
High Electron Mobility
◽
Electron Mobility Transistors
◽
Underlying Mechanisms
◽
Comprehensive Study
Download Full-text
Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors
Applied Physics Letters
◽
10.1063/1.4935223
◽
2015
◽
Vol 107
(19)
◽
pp. 193506
◽
Cited By ~ 36
Author(s):
M. Ťapajna
◽
O. Hilt
◽
E. Bahat-Treidel
◽
J. Würfl
◽
J. Kuzmík
Keyword(s):
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
◽
High Electron Mobility
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Electron Mobility Transistors
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Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated with Indium-Tin-Oxide Electrodes
IEEE Electron Device Letters
◽
10.1109/led.2020.3048009
◽
2020
◽
pp. 1-1
Author(s):
Chih-Yao Chang
◽
Chun-Ta Hsu
◽
Yao-Luen Shen
◽
Tian-Li Wu
◽
Wei-Hung Kuo
◽
...
Keyword(s):
Tin Oxide
◽
Indium Tin Oxide
◽
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
◽
High Electron Mobility
◽
Electron Mobility Transistors
◽
Oxide Electrodes
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Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors
Solid-State Electronics
◽
10.1016/j.sse.2021.108050
◽
2021
◽
pp. 108050
Author(s):
Maria Glória Caño de Andrade
◽
Luis Felipe de Oliveira Bergamim
◽
Braz Baptista Júnior
◽
Carlos Roberto Nogueira
◽
Fábio Alex da Silva
◽
...
Keyword(s):
Electron Mobility
◽
Low Frequency
◽
High Electron Mobility Transistors
◽
Frequency Noise
◽
High Electron
◽
Low Frequency Noise
◽
High Electron Mobility
◽
Electron Mobility Transistors
Download Full-text
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