Effect of incident light polarization on optical properties of an ellipsoidal quantum dot

2013 ◽  
Vol 54 ◽  
pp. 128-136 ◽  
Author(s):  
E. Sadeghi ◽  
S. Alirezaie
2018 ◽  
Author(s):  
Yuri Bleyan ◽  
David B. Hayrapetyan ◽  
H. A. Sarksiyan ◽  
Eduard M. Kazaryan

2020 ◽  
Vol 41 (2) ◽  
pp. 205
Author(s):  
Silvio José Prado

In this article we theoretically study how the presence of charge carriers added to the conduction and valence band of a spherical CdTe quantum dot affects the optical properties, especially the absorption coefficient. For this study, we simulated the interband optical absorption spectrum for incident light with circular polarizations on the left (ê-), on the right (ê+) and linear (êz). We also consider Coulomb's interaction between optically excited and added carriers.


2014 ◽  
Vol 6 (2) ◽  
pp. 1178-1190
Author(s):  
A. JOHN PETER ◽  
Ada Vinolin

Simultaneous effects of magnetic field, pressure and temperature on the exciton binding energies are found in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot. Numerical calculations are carried out taking into consideration of spatial confinement effect. The cylindrical system is taken in the present problem with the strain effects. The electronic properties and the optical properties are found with the combined effects of magnetic field strength, hydrostatic pressure and temperature values. The exciton binding energies and the nonlinear optical properties are carried out taking into consideration of geometrical confinement and the external perturbations.Compact density approach is employed to obtain the nonlinear optical properties. The optical rectification coefficient is obtained with the photon energy in the presence of pressure, temperature and external magnetic field strength. Pressure and temperature dependence on nonlinear optical susceptibilities of generation of second and third order harmonics as a function of incident photon energy are brought out in the influence of magnetic field strength. The result shows that the electronic and nonlinear optical properties are significantly modified by the applications of external perturbations in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot.


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