Ferroelectric Schottky barrier tunnel FET with gate-drain underlap: Proposal and investigation

Superlattices and Microstructures ◽

10.1016/j.spmi.2015.11.019 ◽

2016 ◽

Vol 89 ◽

pp. 225-230 ◽

Cited By ~ 13

Author(s):

Sumit Kale ◽

P.N. Kondekar

Keyword(s):

Schottky Barrier ◽

Tunnel Fet

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Benchmarking of multi-finger Schottky-Barrier tunnel FET for ultra-low power applications

2018 China Semiconductor Technology International Conference (CSTIC) ◽

10.1109/cstic.2018.8369193 ◽

2018 ◽

Author(s):

Jiadi Zhu ◽

Qianqian Huang ◽

Lingyi Guo ◽

Libo Yang ◽

Cheng Chen ◽

...

Keyword(s):

Low Power ◽

Schottky Barrier ◽

Ultra Low Power ◽

Tunnel Fet

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ON Current Enhancement of Nanowire Schottky Barrier Tunnel FET

10.7567/ssdm.2015.ps-3-8 ◽

2015 ◽

Author(s):

K. Takei ◽

S. Hashimoto ◽

J. Sun ◽

X. Zhang ◽

S. Asada ◽

...

Keyword(s):

Schottky Barrier ◽

Tunnel Fet

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A novel self-aligned charge plasma Schottky barrier tunnel FET using work function engineering

Microelectronic Engineering ◽

10.1016/j.mee.2016.11.009 ◽

2017 ◽

Vol 168 ◽

pp. 67-75 ◽

Cited By ~ 5

Author(s):

Sangeeta Singh ◽

Arun Pratap Singh ◽

P.N. Kondekar

Keyword(s):

Work Function ◽

Schottky Barrier ◽

Charge Plasma ◽

Tunnel Fet

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Comparative Analysis of Hetero Gate Dielectric Hetero Structure Tunnel FET and Schottky Barrier FET with n+ Pocket Doping for Suppression of Ambipolar Conduction and Improved RF/Linearity

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2019.2488 ◽

2019 ◽

Vol 14 (2) ◽

pp. 261-271

Author(s):

Prashanth Kumar ◽

Brinda Bhowmick

Keyword(s):

Comparative Analysis ◽

Schottky Barrier ◽

Gate Dielectric ◽

Hetero Structure ◽

Tunnel Fet ◽

Ambipolar Conduction

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Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism

Semiconductor Science and Technology ◽

10.1088/0268-1242/29/9/095013 ◽

2014 ◽

Vol 29 (9) ◽

pp. 095013 ◽

Cited By ~ 7

Author(s):

Qianqian Huang ◽

Ru Huang ◽

Shaowen Chen ◽

Jundong Wu ◽

Zhan Zhan ◽

...

Keyword(s):

Schottky Barrier ◽

Device Physics ◽

Operation Mechanism ◽

Tunnel Fet ◽

Adaptive Operation

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Impact of image force effect on gate-all-around Schottky barrier tunnel FET

2014 IEEE International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2014.7460424 ◽

2014 ◽

Author(s):

Shuichiro Hashimoto ◽

Hiroki Kosugiyama ◽

Kohei Takei ◽

Jing Sun ◽

Yuji Kawamura ◽

...

Keyword(s):

Schottky Barrier ◽

Image Force ◽

Force Effect ◽

Tunnel Fet

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Impact of PZT gate‐stack induced negative capacitance on analogue/RF figures‐of‐merits of electrostatically‐doped ferroelectric Schottky‐barrier tunnel FET

IET Circuits Devices & Systems ◽

10.1049/iet-cds.2018.5276 ◽

2019 ◽

Vol 13 (4) ◽

pp. 435-441 ◽

Cited By ~ 2

Author(s):

Sangeeta Singh ◽

Ruchir Sinha ◽

Pravin Neminath Kondekar

Keyword(s):

Schottky Barrier ◽

Negative Capacitance ◽

Gate Stack ◽

Tunnel Fet

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A novel electrostatically doped ferroelectric Schottky barrier tunnel FET: process resilient design

Journal of Computational Electronics ◽

10.1007/s10825-017-0987-6 ◽

2017 ◽

Vol 16 (3) ◽

pp. 685-695 ◽

Cited By ~ 14

Author(s):

Sangeeta Singh ◽

P. N. Kondekar

Keyword(s):

Schottky Barrier ◽

Tunnel Fet ◽

Resilient Design

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Non-silicide Schottky barrier p-type tunnel FET with a gate-around-drain structure formed by a junctionless FET process

RSC Advances ◽

10.1039/c5ra06280b ◽

2015 ◽

Vol 5 (58) ◽

pp. 46540-46544

Author(s):

Yung-Chin Fang ◽

Ching-Heng Hsieh ◽

Cherng-En Sun ◽

Yung-Hsien Wu

Keyword(s):

Schottky Barrier ◽

Tunnel Fet ◽

P Type

P-type Schottky barrier based tunnel FET with gate-around-drain structure formed by junctionless FET process.

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Gallium Oxide Schottky Barrier Diodes

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.136.479 ◽

2016 ◽

Vol 136 (4) ◽

pp. 479-483

Author(s):

Masataka Higashiwaki ◽

Kohei Sasaki ◽

Hisashi Murakami ◽

Yoshinao Kumagai ◽

Akito Kuramata

Keyword(s):

Schottky Barrier ◽

Gallium Oxide ◽

Schottky Barrier Diodes

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