scholarly journals Crossing and anti-crossing effects of polaritons in a magnetic-semiconductor superlattice influenced by an external magnetic field

2017 ◽  
Vol 103 ◽  
pp. 285-294 ◽  
Author(s):  
Vladimir R. Tuz ◽  
Volodymyr I. Fesenko ◽  
Illia V. Fedorin ◽  
Hong-Bo Sun ◽  
Valeriy M. Shulga
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Magnetic Semiconductor ◽  
Semiconductor Superlattice

Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field

2017 ◽  
Vol 17 (4) ◽  
pp. 522-526 ◽  
Author(s):  
Alexander De Los Reyes ◽  
Elizabeth Ann Prieto ◽  
Karim Omambac ◽  
Jeremy Porquez ◽  
Lorenzo Lopez ◽  
...  
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Emission Characteristics ◽  
Terahertz Emission

SECOND-HARMONIC GENERATION OF THE SURFACE MAGNETOPLASMON ON THE LATERAL SURFACE OF THE SEMICONDUCTOR SUPERLATTICE BOUNDED BY A METAL

1995 ◽  
Vol 02 (05) ◽  
pp. 579-585 ◽  
Author(s):  
N.A. AZARENKOV ◽  
I.B. DENISENKO ◽  
K.N. OSTRIKOV
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Lateral Surface ◽  
Second Harmonic ◽  
Dielectric Tensor ◽  
Generation Process ◽  
Two Dimensional ◽  
Semiconductor Superlattice

The resonant second-harmonic generation process of the surface magnetoplasma wave (SM) propagating across an external magnetic field on the lateral surface of the semiconductor superlattice bounded by a metal is studied. The lateral surface is perpendicular to the layers of the periodic structure and is parallel to the directions of the superlattice axis and the external magnetic field. The latter is assumed to quantize the electrodynamical properties of two-dimensional conducting layers of the semiconductor superlattice. The consideration is carried out in the approximation of the continuous anisotropic medium characterized by an effective dielectric tensor of the superlattice. The numerical estimates showing the efficiency of the second-harmonic generation are carried out for superlattices on the base of GaAs-AlGaAs heterostructures.

scholarly journals Spin Flows in Magnetic Semiconductor/Insulator/Superconductor Tunneling Junction

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Michihide Kitamura ◽  
Akinobu Irie
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Band Structure ◽  
Magnetic Semiconductor ◽  
Tunneling Junction ◽  
External Voltage ◽  
Switching Device ◽  
Band Structure Calculations ◽  
Minority Spin ◽  
Structure Calculations

Tunneling currents along the c-axis of the majority and minority spin electrons have been studied for a magnetic semiconductor (MS)/insulator (I)/superconductor (S) tunneling junction consisting of a Ga1−xMnxAs MS with x = 1/32, a nonmagnetic I with a realistic dimension, and a HgBa2Ca2Cu3O8.4 (Hg-1223) high-Tc S. The normalized charge and spin currents, QT,Cμ′Vex and QT,Sμ′Vex, and the flows of the majority ↑ and minority ↓ spin electrons, QT,↑μ′Vex and QT,↓μ′Vex, have been calculated at a fixed external voltage Vex, as a function of the magnetic moment μ′  (≡μ/μB) per a Mn atom which is deduced from the band structure calculations. It is found that the tunneling due to the minority spin electron dominates when μ′<2.4, but such a phenomenon is not found for μ′>2.4. We have pointed out that the present MS/I/S tunneling junction seems to work as a switching device in which the ↑ and ↓ spin flows can be easily controlled by the external magnetic field.

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