Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field

2017 ◽  
Vol 17 (4) ◽  
pp. 522-526 ◽  
Author(s):  
Alexander De Los Reyes ◽  
Elizabeth Ann Prieto ◽  
Karim Omambac ◽  
Jeremy Porquez ◽  
Lorenzo Lopez ◽  
...  
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Emission Characteristics ◽  
Terahertz Emission

scholarly journals Crossing and anti-crossing effects of polaritons in a magnetic-semiconductor superlattice influenced by an external magnetic field

2017 ◽  
Vol 103 ◽  
pp. 285-294 ◽  
Author(s):  
Vladimir R. Tuz ◽  
Volodymyr I. Fesenko ◽  
Illia V. Fedorin ◽  
Hong-Bo Sun ◽  
Valeriy M. Shulga
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Magnetic Semiconductor ◽  
Semiconductor Superlattice

External magnetic field distribution mapping using terahertz emission from indium antimonide

2017 ◽  
Vol 56 (2) ◽  
pp. 028001 ◽  
Author(s):  
Valynn Katrine Mag-usara ◽  
Dmitry S. Bulgarevich ◽  
Mitsuharu Shiwa ◽  
Makoto Watanabe ◽  
Masahiko Tani
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Field Distribution ◽  
Indium Antimonide ◽  
Magnetic Field Distribution ◽  
Terahertz Emission ◽  
Distribution Mapping

MAGNETIZATION AND MAGNETIC PHASES OF CONDUCTION-BAND DILUTE-MAGNETIC-SEMICONDUCTOR QUANTUM WELLS WITH NON-STEP-LIKE DENSITY OF STATES

2004 ◽  
Vol 18 (27n29) ◽  
pp. 3745-3748
Author(s):  
CONSTANTINOS SIMSERIDES
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Conduction Band ◽  
Density Of States ◽  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Parallel Magnetic Field ◽  
Magnetic Phases ◽  
Semiconductor Quantum Wells

We study the magnetization and the magnetic phases of II-VI-based n-doped non-magnetic-semiconductor (NMS) / narrow to wide dilute-magnetic-semiconductor (DMS) / n-doped NMS quantum wells under in-plane magnetic field. The parallel magnetic field is used as a tool, in order to achieve non-step-like density of states in these -appropriate for conduction-band spintronics- structures.

scholarly journals Spin Flows in Magnetic Semiconductor/Insulator/Superconductor Tunneling Junction

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Michihide Kitamura ◽  
Akinobu Irie
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Band Structure ◽  
Magnetic Semiconductor ◽  
Tunneling Junction ◽  
External Voltage ◽  
Switching Device ◽  
Band Structure Calculations ◽  
Minority Spin ◽  
Structure Calculations

Tunneling currents along the c-axis of the majority and minority spin electrons have been studied for a magnetic semiconductor (MS)/insulator (I)/superconductor (S) tunneling junction consisting of a Ga1−xMnxAs MS with x = 1/32, a nonmagnetic I with a realistic dimension, and a HgBa2Ca2Cu3O8.4 (Hg-1223) high-Tc S. The normalized charge and spin currents, QT,Cμ′Vex and QT,Sμ′Vex, and the flows of the majority ↑ and minority ↓ spin electrons, QT,↑μ′Vex and QT,↓μ′Vex, have been calculated at a fixed external voltage Vex, as a function of the magnetic moment μ′  (≡μ/μB) per a Mn atom which is deduced from the band structure calculations. It is found that the tunneling due to the minority spin electron dominates when μ′<2.4, but such a phenomenon is not found for μ′>2.4. We have pointed out that the present MS/I/S tunneling junction seems to work as a switching device in which the ↑ and ↓ spin flows can be easily controlled by the external magnetic field.

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