Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

Superlattices and Microstructures ◽

10.1016/j.spmi.2018.02.031 ◽

2018 ◽

Vol 116 ◽

pp. 207-214 ◽

Author(s):

Tiecheng Han ◽

Hongdong Zhao ◽

Xiaocan Peng ◽

Yuhai Li

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Short Channel Effects ◽

Short Channel ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Channel Effects ◽

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Correlation Between Electrical Properties Degradation and Short-Channel Effects in Nano-Gate AlGaN/GaN High Electron Mobility Transistors

Nanoscience and Nanotechnology Letters ◽

10.1166/nnl.2012.1410 ◽

2012 ◽

Vol 4 (9) ◽

pp. 944-947

Author(s):

Jiangfeng Du ◽

Xinchuan Zhang ◽

Zhihong Feng ◽

Shaobo Dun ◽

Ziqi Zhao ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Short Channel Effects ◽

Short Channel ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Channel Effects

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Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/abcb34 ◽

2020 ◽

Vol 54 (10) ◽

pp. 105104

Author(s):

Joseph Pinchbeck ◽

Kean Boon Lee ◽

Sheng Jiang ◽

Peter Houston

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Short Channel Effects ◽

Short Channel ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Channel Effects ◽

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0.05-µm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.798 ◽

1994 ◽

Vol 33 (Part 1, No. 1B) ◽

pp. 798-803 ◽

Author(s):

Takatomo Enoki ◽

Masaaki Tomizawa ◽

Yohtaro Umeda ◽

Yasunobu Ishii

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Short Channel Effects ◽

Short Channel ◽

High Electron Mobility ◽

Channel Effects

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Short-Channel AlGaN/GaN Field-Plated High-Electron-Mobility Transistors for X-Band High Power Operation

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.1479 ◽

2008 ◽

Vol 47 (3) ◽

pp. 1479-1483 ◽

Author(s):

Jong-Wook Lee ◽

Almaz S. Kuliev ◽

Ilesanmi Adesida

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Short Channel ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

X Band ◽

High Power Operation ◽

Power Operation

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Kink-effect related noise in short-channel InAlAs/InGaAs high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.1745119 ◽

2004 ◽

Vol 95 (12) ◽

pp. 8271-8274 ◽

Author(s):

B. G. Vasallo ◽

J. Mateos ◽

D. Pardo ◽

T. González

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Short Channel ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Influence of the kink effect on the dynamic performance of short-channel InAlAs/InGaAs high electron mobility transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/20/9/012 ◽

2005 ◽

Vol 20 (9) ◽

pp. 956-960 ◽

Author(s):

B G Vasallo ◽

J Mateos ◽

D Pardo ◽

T González

Keyword(s):

Electron Mobility ◽

Dynamic Performance ◽

High Electron Mobility Transistors ◽

High Electron ◽

Short Channel ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Analysis of the Short-Channel Effect in 50 nm InAlAs/InGaAs Metamorphic High Electron Mobility Transistors

Journal of the Korean Physical Society ◽

10.3938/jkps.53.3267 ◽

2008 ◽

Vol 53 (6) ◽

pp. 3267-3272 ◽

Author(s):

Jae-Seo Lee ◽

Jung-Hun Oh ◽

Byeong-Ok Lim ◽

Jin-Koo Rhee ◽

Sam-Dong Kim

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Short Channel ◽

Short Channel Effect ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Monte Carlo study of kink effect in short-channel InAlAs/InGaAs high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.1603955 ◽

2003 ◽

Vol 94 (6) ◽

pp. 4096-4101 ◽

Author(s):

B. G. Vasallo ◽

J. Mateos ◽

D. Pardo ◽

T. González

Keyword(s):

Monte Carlo ◽

Electron Mobility ◽

Monte Carlo Study ◽

High Electron Mobility Transistors ◽

High Electron ◽

Short Channel ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors

IEICE Electronics Express ◽

10.1587/elex.1.292 ◽

2004 ◽

Vol 1 (11) ◽

pp. 292-297 ◽

Author(s):

Hideaki Matsuzaki ◽

Hiroki Sugiyama ◽

Haruki Yokoyama ◽

Takashi Kobayashi ◽

Takatomo Enoki

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Short Channel ◽

Short Channel Effect ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4935223 ◽

2015 ◽

Vol 107 (19) ◽

pp. 193506 ◽

Author(s):

M. Ťapajna ◽

O. Hilt ◽

E. Bahat-Treidel ◽

J. Würfl ◽

J. Kuzmík

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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