Correlation Between Electrical Properties Degradation and Short-Channel Effects in Nano-Gate AlGaN/GaN High Electron Mobility Transistors

High Electron ◽

Short Channel Effects ◽

Short Channel ◽

High Electron Mobility ◽

Channel Effects

Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/abcb34 ◽

2020 ◽

Vol 54 (10) ◽

pp. 105104

Author(s):

Joseph Pinchbeck ◽

Kean Boon Lee ◽

Sheng Jiang ◽

Peter Houston

Keyword(s):

Electron Mobility ◽

High Electron ◽

Short Channel Effects ◽

Metal Gate ◽

Short Channel ◽

High Electron Mobility ◽

Channel Effects ◽

Dual Metal

Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

Superlattices and Microstructures ◽

10.1016/j.spmi.2018.02.031 ◽

2018 ◽

Vol 116 ◽

pp. 207-214 ◽

Cited By ~ 8

Author(s):

Tiecheng Han ◽

Hongdong Zhao ◽

Xiaocan Peng ◽

Yuhai Li

Keyword(s):

Electron Mobility ◽

High Electron ◽

Short Channel Effects ◽

Short Channel ◽

High Electron Mobility ◽

Channel Effects ◽

Algan Buffer

Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors

Applied Physics Express ◽

10.7567/apex.7.095502 ◽

2014 ◽

Vol 7 (9) ◽

pp. 095502 ◽

Cited By ~ 4

Author(s):

Yuen-Yee Wong ◽

Edward Yi Chang ◽

Wei-Ching Huang ◽

Yueh-Chin Lin ◽

Yung-Yi Tu ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Growth Mode ◽

High Electron ◽

High Electron Mobility ◽

0.05-µm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.798 ◽

1994 ◽

Vol 33 (Part 1, No. 1B) ◽

pp. 798-803 ◽

Cited By ~ 93

Author(s):

Takatomo Enoki ◽

Masaaki Tomizawa ◽

Yohtaro Umeda ◽

Yasunobu Ishii

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Short Channel Effects ◽

Short Channel ◽

High Electron Mobility ◽

Channel Effects

Influence of Growth Parameters and Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on 4-Inch Si Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.111002 ◽

2009 ◽

Vol 48 (11) ◽

pp. 111002 ◽

Cited By ~ 9

Author(s):

Shuxin Tan ◽

Takaaki Suzue ◽

S. Lawrence Selvaraj ◽

Takashi Egawa

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Growth Parameters ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility ◽

Short-Channel AlGaN/GaN Field-Plated High-Electron-Mobility Transistors for X-Band High Power Operation

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.1479 ◽

2008 ◽

Vol 47 (3) ◽

pp. 1479-1483 ◽

Cited By ~ 2

Author(s):

Jong-Wook Lee ◽

Almaz S. Kuliev ◽

Ilesanmi Adesida

Keyword(s):

High Power ◽

Electron Mobility ◽

High Electron ◽

Short Channel ◽

High Electron Mobility ◽

X Band ◽

High Power Operation ◽

Power Operation

Comparative Analysis of Nano-Scale Structural and Electrical Properties in AlGaN/GaN High Electron Mobility Transistors on SiC and Sapphire Substrates

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2013.7631 ◽

2013 ◽

Vol 13 (10) ◽

pp. 7083-7088 ◽

Cited By ~ 2

Author(s):

Cong Wang ◽

Sung-Jin Cho ◽

Nam-Young Kim

Keyword(s):

Comparative Analysis ◽

Electrical Properties ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Nano Scale ◽

Structural And Electrical Properties

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Electrical properties of molecular beam epitaxially grown Al[sub x]Ga[sub 1−x]Sb[sub y]As[sub 1−y] and its application in InP-based high electron mobility transistors

10.1116/1.1376382 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1529 ◽

Cited By ~ 2

Author(s):

W. Z. Cai ◽

N. T. Moshegov ◽

T. S. Mayer ◽

D. L. Miller

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

The effects of processing of high-electron-mobility transistors on the strain state and the electrical properties of AlGaN/GaN structures

Applied Physics Letters ◽

10.1063/1.3263955 ◽

2009 ◽

Vol 95 (20) ◽

pp. 203504 ◽

Cited By ~ 20

Author(s):

F. González-Posada Flores ◽

C. Rivera ◽

E. Muñoz

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Strain State ◽

High Electron ◽

High Electron Mobility ◽

Kink-effect related noise in short-channel InAlAs/InGaAs high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.1745119 ◽

2004 ◽

Vol 95 (12) ◽

pp. 8271-8274 ◽

Cited By ~ 23

Author(s):

B. G. Vasallo ◽

J. Mateos ◽

D. Pardo ◽

T. González

Keyword(s):

Electron Mobility ◽

High Electron ◽

Short Channel ◽

High Electron Mobility ◽

Kink Effect