Effect of thermal annealing in the microstructural and the optical properties of uncapped InAs quantum dots grown on GaAs buffer layers

2005 ◽  
Vol 133 (1) ◽  
pp. 65-70 ◽  
Author(s):  
K.H. Lee ◽  
J.Y. Lee ◽  
D.U. Lee ◽  
T.W. Kim ◽  
H.S. Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Buffer Layers ◽  
Inas Quantum Dots

Effects of Rapid Thermal Annealing on the Optical Properties of InAs Quantum Dots with Asymmetric InGaAs Layers

2009 ◽  
Vol 54 (4) ◽  
pp. 1655-1659 ◽  
Author(s):  
Do Yeob Kim ◽  
Min Su Kim ◽  
Tae Hoon Kim ◽  
Ghun Sik Kim ◽  
Hyun Young Choi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Inas Quantum Dots

scholarly journals Optical properties of InAs quantum dots embedded in InGaAs/AlGaAs/GaAs structures with different capping layers

2021 ◽  
Vol 1723 (1) ◽  
pp. 012037
Author(s):  
R Cisneros-Tamayo ◽  
T Torchynska ◽  
J L Casas-Espinola ◽  
G Polupan ◽  
M Reséndiz-Chincoya
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Inas Quantum Dots

Effect of Annealing on Optical Properties of InAs Quantum Dots Grown by MOCVD on GaAs (100) Vicinal Substrates

2005 ◽  
Vol 22 (10) ◽  
pp. 2692-2695 ◽  
Author(s):  
Liang Song ◽  
Zhu Hong-Liang ◽  
Pan Jiao-Qing ◽  
Zhao Ling-Juan ◽  
Wang Wei
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Inas Quantum Dots

Emission and X ray diffraction in AlGaAs/ InGaAs Quantum wells with embedded InAs Quantum dots

2013 ◽  
Vol 1617 ◽  
pp. 43-48
Author(s):  
R. Cisneros Tamayo ◽  
I.J. Gerrero Moreno ◽  
A. Vivas Hernandez ◽  
J.L. Casas Espinola ◽  
L. Shcherbyna
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Peak Position ◽  
Thermal Treatments ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Prepared State ◽  
Temperature Dependences

ABSTRACTThe photoluminescence (PL), its temperature dependence and X-ray diffraction (XRD) have been studied in MBE grown GaAs/AlGaAs/InGaAs/AlGaAs /GaAs quantum wells (QWs) with InAs quantum dots embedded in the center of InGaAs layer in the freshly prepared states and after the thermal treatments during 2 hours at 640 or 710 °C. The structures contained two buffer (Al0.3Ga0.7As/In0.15Ga0.85As) and two capping (In0.15Ga0.85As / Al0.3Ga0.7As) layers. The temperature dependences of PL peak positions have been analyzed in the temperature range 10-500K with the aim to investigate the QD composition and its variation at thermal annealing. The experimental parameters of the temperature variation of PL peak position in the InAs QDs have been compared with the known one for the bulk InAs crystals and the QD composition variation due to Ga/Al/In inter diffusion at thermal treatments has been detected. XRD have been studied with the aim to estimate the capping/buffer layer compositions in the different QW layers in freshly prepared state and after the thermal annealing. The obtained emission and XRD data and their dependences on the thermal treatment have been analyzed and discussed.

Sign in / Sign up

Export Citation Format

Share Document