Effect of oxygen substitution by halide ions on structure, thermal stability and upconversion fluorescence in Er3+/Yb3+-codoped germanium–bismuth glasses

2005 ◽  
Vol 134 (7) ◽  
pp. 449-453 ◽  
Author(s):  
Hongtao Sun ◽  
Liyan Zhang ◽  
Chunlei Yu ◽  
Zhongchao Duan ◽  
Junjie Zhang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Halide Ions ◽  
Upconversion Fluorescence ◽  
Effect Of Oxygen ◽  
Oxygen Substitution

The effect of oxygen on the thermal stability of Si1−xGexstrained layers

1991 ◽  
Vol 58 (14) ◽  
pp. 1536-1538 ◽  
Author(s):  
D. B. Noble ◽  
J. L. Hoyt ◽  
W. D. Nix ◽  
J. F. Gibbons ◽  
S. S. Laderman ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Effect Of Oxygen ◽  
Thermal Stability Of

Effect of oxygen substitution on the optoelectronic properties of the ternary ZnSe1-xOx alloys

Optik ◽  
2016 ◽  
Vol 127 (22) ◽  
pp. 11020-11028 ◽  
Author(s):  
I. Sekkiou ◽  
H. Benoudnine ◽  
A. Boukortt ◽  
Y. Zidi
Keyword(s):  
Optoelectronic Properties ◽  
Effect Of Oxygen ◽  
Oxygen Substitution

Effect of oxygen substitution by nitrogen on magnetic and transport properties in Sr2FeMoO6 compound

2012 ◽  
Vol 38 (2) ◽  
pp. 1359-1363 ◽  
Author(s):  
Guoyan Huo ◽  
Jingjuan Wen ◽  
Chenghui Zhang ◽  
Minghui Ren
Keyword(s):  
Transport Properties ◽  
Effect Of Oxygen ◽  
Oxygen Substitution

The effect of oxygen in WN x films on thermal stability of WN x /GaAs interfaces

1993 ◽  
Vol 4 (3) ◽  
pp. 197-199 ◽  
Author(s):  
D. Gregušová ◽  
T. Lalinský ◽  
ž. Mozolová ◽  
J. Breza ◽  
P. Vogrinčič
Keyword(s):  
Thermal Stability ◽  
Effect Of Oxygen ◽  
Thermal Stability Of

Effect of oxygen concentration on the thermal stability of magnetron sputtered amorphous Ta–Ni thin films

2012 ◽  
Vol 520 (6) ◽  
pp. 2356-2361 ◽  
Author(s):  
Hua Yan ◽  
Raissa Nathania Santoso ◽  
Yueyue Jiang ◽  
Meng Heng Liang ◽  
Zhong Chen
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Oxygen Concentration ◽  
Effect Of Oxygen ◽  
Thermal Stability Of

The Effect of Oxygen on the Thermal Stability of Si1−xGex Strained Layers Grown by Limited Reaction Processing

1991 ◽  
Vol 220 ◽  
Author(s):  
D. B. Noble ◽  
J. L. Hoyt ◽  
P. Kuo ◽  
W. D. Nix ◽  
J. F. Gibbons ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Solid Solution ◽  
Oxygen Content ◽  
Low Oxygen ◽  
Strained Layers ◽  
High Oxygen Content ◽  
Solid Solution Strengthening ◽  
Solution Strengthening ◽  
Effect Of Oxygen ◽  
Content Support

ABSTRACTSi1−xGex layers containing 2×1020 oxygen atoms/cm3 exhibit an enhancement in thermal stability when compared to similar films (comparable Ge content and thickness) with 2 orders of magnitude less oxygen. X-ray measurements of the lattice constants in the strained films indicate that the oxygen does not substantially change the amount of strain in the layers. A prediction of the effect of oxygen based on solid solution strengthening theory is shown to be consistent with experimental annealing results. In addition, experimental measurements of slower misfit dislocation velocities in the layers with high oxygen content compared to those measured in films with low oxygen content, support the idea of solid solution strengthening. It is therefore likely that oxygen impedes the kinetics of dislocation formation.

Effect of oxygen content on thermal stability of grain size for nanocrystalline Fe10Cr and Fe14Cr4Hf alloy powders

2017 ◽  
Vol 720 ◽  
pp. 510-520 ◽  
Author(s):  
Peiman Shahbeigi Roodposhti ◽  
Mostafa Saber ◽  
Carl Koch ◽  
Ronald Scattergood ◽  
Sina Shahbazmohamadi
Keyword(s):  
Thermal Stability ◽  
Grain Size ◽  
Oxygen Content ◽  
Effect Of Oxygen ◽  
Thermal Stability Of
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