Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model
2004 ◽
Vol 48
(5)
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pp. 781-787
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Keyword(s):
2006 ◽
Vol 50
(7-8)
◽
pp. 1299-1309
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Keyword(s):
2010 ◽
Vol 57
(8)
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pp. 1820-1828
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2012 ◽
Vol 2
(1)
◽
pp. 23-32
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Keyword(s):
Keyword(s):