Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model

2004 ◽  
Vol 48 (5) ◽  
pp. 781-787 ◽  
Author(s):  
Fabien Prégaldiny ◽  
Christophe Lallement ◽  
Daniel Mathiot
2016 ◽  
pp. hxw037
Author(s):  
Jonathan P. Black ◽  
Christopher J.W. Breward ◽  
Peter D. Howell

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