scholarly journals Comprehensive study of components affecting extrinsic transconductance in In0.7Ga0.3As quantum-well high-electron-mobility transistors for image sensor applications

2021 ◽  
Vol 30 (6) ◽  
pp. 441-445
Author(s):  
Seung-Won Yun ◽  
Dae-Hyun Kim
Keyword(s):  
Quantum Well ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Image Sensor ◽  
High Electron ◽  
High Electron Mobility ◽  
Sensor Applications ◽  
Electron Mobility Transistors ◽  
Comprehensive Study

InAlSb/InAs/AlGaSb Quantum Well Heterostructures for High-Electron-Mobility Transistors

2007 ◽  
Vol 36 (2) ◽  
pp. 99-104 ◽  
Author(s):  
Brian R. Bennett ◽  
J. Brad Boos ◽  
Mario G. Ancona ◽  
N. A. Papanicolaou ◽  
Graham A. Cooke ◽  
...  
Keyword(s):  
Quantum Well ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Theoretical Charge Control Investigations in InN-Based Quantum Well Double Heterostructure High Electron Mobility Transistors (QW-DHEMTs)

2011 ◽  
Vol 403-408 ◽  
pp. 52-58 ◽  
Author(s):  
Md. Rejvi Kaysir ◽  
Rafiqul Islam
Keyword(s):  
Quantum Well ◽  
Charge Density ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Charge Control ◽  
Electron Mobility Transistors ◽  
Sheet Charge

In this paper, charge control mechanism and carrier features have been precisely investigated in InxGa1-xN/InN/InxGa1-xN based quantum-well double heterostructure high electron mobility transistors (QW-DHEMTs). A study of charge control in the InxGa1-xN/InN/InxGa1-xN structure is performed by self-consistently solving Schrödinger equation in conjunction with Poisson’s equation taking into account the spontaneous and piezoelectric polarization effects. The potential profile and the distribution of electron density in the channel as a function of gate voltage are investigated here. A large conduction band offset of about 2.2eV is obtained for the proposed device for In content x=0.05, which ensure better carrier confinement and higher sheet charge density. The influence of In composition(x) and doping concentration of InxGa1-xN upper barrier on sheet charge density and carrier distributions in channel is also presented. This analysis provides a platform to investigate the InN based QW-DHEMTs and to optimized their design.

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