N 2 O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors

2013 ◽  
Vol 231 ◽  
pp. 281-284 ◽  
Author(s):  
Geng-Wei Chang ◽  
Ting-Chang Chang ◽  
Jhe-Ciou Jhu ◽  
Tsung-Ming Tsai ◽  
Yong-En Syu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Plasma Treatment ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Temperature Dependent ◽  
Indium Gallium

P-20: Highly Stable Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors with N2O Plasma Treatment

2011 ◽  
Vol 42 (1) ◽  
pp. 1170-1172 ◽  
Author(s):  
Hoon Yim ◽  
Dae-Hwan Kim ◽  
SeungChan Choi ◽  
Byung Gook Choi ◽  
Sul Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment

2013 ◽  
Vol 114 (20) ◽  
pp. 204501 ◽  
Author(s):  
Jhe-Ciou Jhu ◽  
Ting-Chang Chang ◽  
Geng-Wei Chang ◽  
Ya-Hsiang Tai ◽  
Wu-Wei Tsai ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Defect Formation ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
Sign in / Sign up

Export Citation Format

Share Document