Suppressed Temperature-dependent Sub-threshold Leakage Current of amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors by Nitrous Oxide Plasma Treatment

2012 ◽  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Nitrous Oxide ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Temperature Dependent ◽  
Indium Gallium

P-20: Highly Stable Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors with N2O Plasma Treatment

2011 ◽  
Vol 42 (1) ◽  
pp. 1170-1172 ◽  
Author(s):  
Hoon Yim ◽  
Dae-Hwan Kim ◽  
SeungChan Choi ◽  
Byung Gook Choi ◽  
Sul Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment

2013 ◽  
Vol 114 (20) ◽  
pp. 204501 ◽  
Author(s):  
Jhe-Ciou Jhu ◽  
Ting-Chang Chang ◽  
Geng-Wei Chang ◽  
Ya-Hsiang Tai ◽  
Wu-Wei Tsai ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Defect Formation ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
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