Surface scaling evolution and dielectric properties of sputter-deposited low loss Mg 2 SiO 4 thin films

2013 ◽  
Vol 231 ◽  
pp. 229-233 ◽  
Author(s):  
Chan Su Han ◽  
Bhaskar Chandra Mohanty ◽  
Hong Rak Choi ◽  
Yong Soo Cho
2004 ◽  
Vol 1 (2) ◽  
pp. 47-52
Author(s):  
Brian Dusch ◽  
Paul A. Kohl

Thin films (0.2 μm to 1.8 μm) of photosensitive and nonphotosensitive BCB were fabricated and the degree of planarization (DOP) and dielectric properties were investigated. It was found that a high DOP for wide spaces (>20 μm spaces with 1 μm of BCB) was possible with nonphotosensitive BCB but not photosensitive BCB because of the cross-linking reaction during the photo-process. Thin films (as thin as 0.2 μm) exhibited dielectric properties similar to thick films. The dielectric properties of the photosensitive BCB were slightly higher than nonphotosensitive BCB. Low loss properties were observed at all thickness.


2016 ◽  
Vol 06 (01) ◽  
pp. 1650003 ◽  
Author(s):  
A. Eršte ◽  
L. Fulanović ◽  
L. Čoga ◽  
M. Lin ◽  
Y. Thakur ◽  
...  

We have investigated dielectric properties of aromatic polythiourea (ArPTU, a polar polymer containing high dipolar moments with very low defect levels) thin films that were developed on Pt/SiO2 substrate. The detected response is compared to the response of commercially available polymers, such as high density polyethylene (HDPE) and polypropylene (PP), which are at present used in foil capacitors. Stable values of the dielectric constant [Formula: see text] (being twice higher than in HDPE and PP) over broad temperature and frequency ranges and dielectric losses as low as in commercial systems suggest ArPTU as a promising candidate for future use in a variety of applications.


1999 ◽  
Vol 14 (11) ◽  
pp. 4307-4318 ◽  
Author(s):  
S. Hiboux ◽  
P. Muralt ◽  
T. Maeder

In situ reactively sputter deposited, 300-nm-thick Pb(Zrx, Ti1−x)O3 thin films were investigated as a function of composition, texture, and different electrodes (Pt,RuO2).X-ray diffraction analysis, ferroelectric, dielectric, and piezoelectric measurements were carried out. While for dielectric properties bulklike contributions from lattice as well as from domains are observed, domain wall contributions to piezoelectric properties are very much reduced in the morphotropic phase boundary (MPB) region. Permittivity and d33 do not peak at the same composition; the MPB region is broadened up and generally shifted to the tetragonal side.


2013 ◽  
Vol 527 ◽  
pp. 250-254 ◽  
Author(s):  
Chan Su Han ◽  
Bhaskar Chandra Mohanty ◽  
Chong Yun Kang ◽  
Yong Soo Cho

2008 ◽  
Vol 103 (11) ◽  
pp. 114112 ◽  
Author(s):  
Ø. Dahl ◽  
J. K. Grepstad ◽  
T. Tybell

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