AlCoCrNiMo high-entropy alloy as diffusion barrier between NiAlHf coating and Ni-based single crystal superalloy

2021 ◽  
Vol 414 ◽  
pp. 127101 ◽  
Author(s):  
Zhongzhan Xu ◽  
Peng Zhang ◽  
Wei Wang ◽  
Qian Shi ◽  
Hongzhi Yang ◽  
...  
Entropy ◽  
2020 ◽  
Vol 22 (2) ◽  
pp. 234
Author(s):  
Chunxia Jiang ◽  
Rongbin Li ◽  
Xin Wang ◽  
Hailong Shang ◽  
Yong Zhang ◽  
...  

In this study, high-entropy alloy films, namely, AlCrTaTiZr/AlCrTaTiZr-N, were deposited on the n-type (100) silicon substrate. Then, a copper film was deposited on the high-entropy alloy films. The diffusion barrier performance of AlCrTaTiZr/AlCrTaTiZr-N for Cu/Si connect system was investigated after thermal annealing for an hour at 600 °C, 700 °C, 800 °C, and 900 °C. There were no Cu-Si intermetallic compounds generated in the Cu/AlCrTaTiZr/AlCrTaTiZr-N/Si film stacks after annealing even at 900 °C through transmission electron microscopy (TEM) and atomic probe tomography (APT) analysis. The results indicated that AlCrTaTiZr/AlCrTaTiZr-N alloy films can prevent copper diffusion at 900 °C. The reason was investigated in this work. The amorphous structure of the AlCrTaTiZr layer has lower driving force to form intermetallic compounds; the lattice mismatch between the AlCrTaTiZr and AlCrTaTiZ-rN layers increased the diffusion distance of the Cu atoms and the difficulty of the Cu atom diffusion to the Si substrate.


2007 ◽  
Vol 68 (5-6) ◽  
pp. 343-363 ◽  
Author(s):  
Toshio Narita ◽  
Fengqun Lang ◽  
Kemas Zaini Thosin ◽  
Takayuki Yoshioka ◽  
Takeshi Izumi ◽  
...  

2012 ◽  
Vol 22 (2) ◽  
pp. 146-152 ◽  
Author(s):  
Zhiming Bai ◽  
Dongqing Li ◽  
Hui Peng ◽  
Juan Wang ◽  
Hongbo Guo ◽  
...  

JOM ◽  
2013 ◽  
Vol 65 (12) ◽  
pp. 1751-1758 ◽  
Author(s):  
S. G. Ma ◽  
S. F. Zhang ◽  
M. C. Gao ◽  
P. K. Liaw ◽  
Y. Zhang

2007 ◽  
Vol 68 (5-6) ◽  
pp. 313-329 ◽  
Author(s):  
Daisuke Sumoyama ◽  
Kemas Zaini Thosin ◽  
Takumi Nishimoto ◽  
Takayuki Yoshioka ◽  
Takeshi Izumi ◽  
...  

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