One of the main emphases of research on interfaces is to characterize them both structurally and chemically. The atomic structure of interfaces and the existence of thin interfacial glassy phases are being investigated mainly by HREM imaging methods. In addition, a few other methods including dark field diffuse imaging and Fresnel Fringe techniques have been developed to identify the interfacial films and quantify their width. Fresnel fringe profiles from the interface images have been used to deduce the mean inner potential of thin interfacial films. In our research the Fresnel fringe contrast behavior of a tilt grain boundary in silicon whose structure and chemistry were previously characterized by HREM and high spatial resolution AEM was analyzed by comparing the experimental Fresnel fringe profiles with computer simulations of these images.