The (2×2) reconstructions on the surface of cobalt silicides: Atomic configuration at the annealed Co/Si(111) interface

2017 ◽  
Vol 662 ◽  
pp. 6-11 ◽  
Author(s):  
V.G. Kotlyar ◽  
A.A. Alekseev ◽  
D.A. Olyanich ◽  
T.V. Utas ◽  
A.V. Zotov ◽  
...  
Keyword(s):  
Atomic Configuration ◽  
Cobalt Silicides

Development Of High-Strength Aluminum-Based Alloys By Synthesis Of New Multicomponent Quasicrystals

1998 ◽  
Vol 553 ◽  
Author(s):  
A. Inoue ◽  
H. M. Kimura
Keyword(s):  
Mechanical Properties ◽  
Powder Metallurgy ◽  
Rapid Solidification ◽  
Future Development ◽  
High Strength ◽  
Supercooled Liquid ◽  
Engineering Properties ◽  
Atomic Configuration ◽  
Lanthanide Metal ◽  
Bulk Alloys

AbstractBy the control of composition, clustered atomic configuration and stability of the supercooled liquid in the rapid solidification and powder metallurgy processes, high-strength Al-based bulk alloys containing nanoscale nonperiodic phases were produced in AI-Ln-LTM, AI-ETM-LTM and Al-(V, Cr, Mn)-LTM (Ln=lanthanide metal, LTM=VII and VIII group metals, ETM=IV to VI group metals) alloys containing high Al contents of 92 to 95 at%. The nonperiodic phases are composed of amorphous or icosahedral (I) phase. In particular, the Al-based bulk alloys consisting of nanoscale I particles surrounded by Al phase exhibit much better mechanical properties as compared with commercial Al base alloys. The success of producing the Al-based alloys with good engineering properties by use of I phase is important for future development of I-based alloys as practical materials.

Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates

2009 ◽  
Vol 156-158 ◽  
pp. 199-204
Author(s):  
Hiroaki Kariyazaki ◽  
Tatsuhiko Aoki ◽  
Kouji Izunome ◽  
Koji Sueoka
Keyword(s):  
Molecular Simulation ◽  
Wafer Bonding ◽  
Crystal Orientation ◽  
High Performance ◽  
Cmos Technology ◽  
Experimental Results ◽  
Interfacial Structure ◽  
Atomic Configuration ◽  
Promising Technology ◽  
Bonded Interface

Hybrid crystal orientation technology (HOT) substrates comprised of Si (100) and (110) surface orientation paralleling each <110> direction attract considerable attentions as one of the promising technology for high performance bulk CMOS technology. Although HOT substrates are fabricated by wafer bonding of Si (110) and Si (100) surfaces, it is not clear the atomic configuration of interfacial structure. Furthermore, the possibility for the interface to be an effective gettering source of impurity metals was not well studied. In this paper, we studied the interfacial structure and gettering efficiency of the atomic bonded interface by molecular simulations. The results indicate that the simulated atomic configuration and gettering efficiency of the bonded interface agreed well with the experimental results.

Low Temperature Silicides for Poly-Silicon Thin Film Transistor Applications

1995 ◽  
Vol 402 ◽  
Author(s):  
G. T. Sarcona ◽  
M. K. Hatalis
Keyword(s):  
Thin Film ◽  
Sheet Resistance ◽  
Thin Film Transistor ◽  
Surface Preparation ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Cobalt Nickel ◽  
Silicon Materials ◽  
Cobalt Silicides ◽  
Matrix Liquid

AbstractThin films of cobalt, nickel, and tungsten were sputtered on three types of silicon materials to explore their potential for use as silicides in thin film transistor technologies for active matrix liquid crystal displays. The metals were sputtered onto single-crystal, polycrystalline, and amorphous silicon. The metals were annealed in vacuum after deposition over temperatures ranging from 250°C to 750°C. The sheet resistance of the resulting silicide films was measured using a four point probe apparatus. Cobalt silicides with sheet resistance of less than 4 Ω/ were formed at 600°C. Nickel produced films with sheet resistance below 10 Ω/▪ at 350°C, though the surface was required to be vacuum-clean. In this study, tungsten did not produce silicides. Surface preparation has been found to be an important factor in tungsten and nickel silicidation.

Atomic configuration of hydrogenated and clean Si(110) surfaces

1986 ◽  
Vol 34 (4) ◽  
pp. 2329-2335 ◽  
Author(s):  
H. Ampo ◽  
S. Miura ◽  
K. Kato ◽  
Y. Ohkawa ◽  
A. Tamura
Keyword(s):  
Atomic Configuration

scholarly journals Atomic configuration of boron pile-up at the Si/SiO2 interface

2004 ◽  
Vol 1 (6) ◽  
pp. 126-130 ◽  
Author(s):  
Masayuki Furuhashi ◽  
Tetsuya Hirose ◽  
Hiroshi Tsuji ◽  
Masayuki Tachi ◽  
Kenji Taniguchi
Keyword(s):  
Atomic Configuration ◽  
Pile Up
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