Characterization of oxide-supported Cu by infrared measurements on adsorbed CO

The preparation of a number of polymeric, octahedral bis(N- alkylmonothiocarbamato)nickel(II) complexes and some of their base adducts is described. �� The preparation and characterization of some bis(phosphine)bis(N- alkylmono-thiocarbamato)palladium(II) compounds are also described for the first time. The butyl compound is monomeric in chloroform and infrared spectral measurements of all compounds indicate that the monothiocarbamate ligands are bonded to palladium through the sulphur atoms only. The proton magnetic resonance spectrum of the dimethylphenylphosphine complex shows clearly that the phosphine groups are trans in the complexes. �� Simple bis(monothiocarbamato)-palladium(II) or -platinum(II) have not been isolated but pyrrolidinium tetra(N- pyrrolidylmonothiocarbamato)-palladium(II) or -platinum(II) compounds are formed. Infrared measurements indicate that the mono-thiocarbamate ligands are bonded to the metal through both oxygen and sulphur atoms but no definite structure can be proposed for these compounds at present.

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Characterization of atmospheric aerosols from infrared measurements: simulations, testing, and applications

Applied Optics ◽

10.1364/ao.43.005503 ◽

2004 ◽

Vol 43 (29) ◽

pp. 5503 ◽

Cited By ~ 18

Author(s):

Alexander Yu. Zasetsky ◽

Alexei F. Khalizov ◽

James J. Sloan

Keyword(s):

Atmospheric Aerosols ◽

Infrared Measurements

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Characterization of the Oxidation States of Supported Gold Species by IR Spectroscopy of Adsorbed CO

Chemie Ingenieur Technik ◽

10.1002/cite.200700029 ◽

2007 ◽

Vol 79 (6) ◽

pp. 795-806 ◽

Cited By ~ 104

Author(s):

M. Mihaylov ◽

H. Knözinger ◽

K. Hadjiivanov ◽

B. C. Gates

Keyword(s):

Ir Spectroscopy ◽

Oxidation States ◽

Adsorbed Co ◽

Supported Gold

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Quantitative determination of gold active sites by chemisorption and by infrared measurements of adsorbed CO

Journal of Catalysis ◽

10.1016/j.jcat.2005.11.026 ◽

2006 ◽

Vol 237 (2) ◽

pp. 431-434 ◽

Cited By ~ 69

Author(s):

F MENEGAZZO ◽

M MANZOLI ◽

A CHIORINO ◽

F BOCCUZZI ◽

T TABAKOVA ◽

...

Keyword(s):

Quantitative Determination ◽

Active Sites ◽

Infrared Measurements ◽

Adsorbed Co

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Characterization of the Oxidation States of Supported Gold Species by IR Spectroscopy of Adsorbed CO.

ChemInform ◽

10.1002/chin.200736217 ◽

2007 ◽

Vol 38 (36) ◽

Author(s):

Mihail Mihaylov ◽

Helmut Knoezinger ◽

Konstantin Hadjiivanov ◽

Bruce C. Gates

Keyword(s):

Ir Spectroscopy ◽

Oxidation States ◽

Adsorbed Co ◽

Supported Gold

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Rapid characterization of the fatigue limit of additive-manufactured maraging steels using infrared measurements

Additive Manufacturing ◽

10.1016/j.addma.2020.101310 ◽

2020 ◽

Vol 35 ◽

pp. 101310

Author(s):

Corentin Douellou ◽

Xavier Balandraud ◽

Emmanuel Duc ◽

Benoit Verquin ◽

Fabien Lefebvre ◽

...

Keyword(s):

Fatigue Limit ◽

Maraging Steels ◽

Infrared Measurements ◽

Rapid Characterization

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Qualitative Evidence for Adsorbate-Induced Edge Metal Atom Localization: The Characterization of Lifted Backbond Degeneracy in Adsorbed CO through the Model Adsorption of Methyl Isocyanide on Pd/Al2O3

Journal of Catalysis ◽

10.1006/jcat.1999.2681 ◽

2000 ◽

Vol 189 (1) ◽

pp. 158-169 ◽

Cited By ~ 5

Author(s):

Mark R. Albert

Keyword(s):

Metal Atom ◽

Qualitative Evidence ◽

Methyl Isocyanide ◽

Adsorbed Co ◽

Atom Localization

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Characterization of Implantation Induced Defects in Si-Implanted SiO2 Film

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2008.327 ◽

2008 ◽

Vol 8 (3) ◽

pp. 1350-1354 ◽

Cited By ~ 1

Author(s):

Xiaopeng Hao ◽

Chunlan Zhou ◽

Runsheng Yu ◽

Baoyi Wang ◽

Long Wei

Keyword(s):

Ion Implantation ◽

Positron Annihilation Spectroscopy ◽

Sio2 Film ◽

Blue Band ◽

Band Emission ◽

Infrared Measurements ◽

Different Temperatures ◽

Induced Defects ◽

Variable Energy

Si-implanted thermal SiO2 layers and their annealing behaviour were investigated. In the results of variable-energy positron annihilation spectroscopy, the defects caused by ion implantation are manifested as a particularly low S parameter in the Si ion implantation region of the SiO2 layer. Compared with Fourier transform infrared measurements, it suggests that the decrease of the line shape S parameter after implantation is related to the compaction of implanted layers induced by the breaking of the SiO2 network structure. The presence of blue band emission (430–470 nm) in the implanted SiO2 layer is associated with neutral oxygen vacancy. An increase of the S parameter in the implanted layers is observed after annealing at different temperatures, but it is impossible completely recover the pre-implantation condition after a thermal treatment.

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