Selective growth of carbon nanotubes and their application to triode-type field emitter arrays

2004 ◽  
Vol 462-463 ◽  
pp. 19-23 ◽  
Author(s):  
Hyung Soo Uh ◽  
Soo Myun Lee ◽  
Pil Goo Jeon ◽  
Byung Hwak Kwak ◽  
Sang Sik Park ◽  
...  
2001 ◽  
Vol 78 (7) ◽  
pp. 901-903 ◽  
Author(s):  
Jung Inn Sohn ◽  
Seonghoon Lee ◽  
Yoon-Ho Song ◽  
Sung-Yool Choi ◽  
Kyoung-Ik Cho ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3244
Author(s):  
Jiuzhou Zhao ◽  
Zhenjun Li ◽  
Matthew Thomas Cole ◽  
Aiwei Wang ◽  
Xiangdong Guo ◽  
...  

The nanocone-shaped carbon nanotubes field-emitter array (NCNA) is a near-ideal field-emitter array that combines the advantages of geometry and material. In contrast to previous methods of field-emitter array, laser ablation is a low-cost and clean method that does not require any photolithography or wet chemistry. However, nanocone shapes are hard to achieve through laser ablation due to the micrometer-scale focusing spot. Here, we develop an ultraviolet (UV) laser beam patterning technique that is capable of reliably realizing NCNA with a cone-tip radius of ≈300 nm, utilizing optimized beam focusing and unique carbon nanotube–light interaction properties. The patterned array provided smaller turn-on fields (reduced from 2.6 to 1.6 V/μm) in emitters and supported a higher (increased from 10 to 140 mA/cm2) and more stable emission than their unpatterned counterparts. The present technique may be widely applied in the fabrication of high-performance CNTs field-emitter arrays.


2008 ◽  
Vol 93 (5) ◽  
pp. 053107 ◽  
Author(s):  
Kenichi Suzuki ◽  
Hidetoshi Matsumoto ◽  
Mie Minagawa ◽  
Akihiko Tanioka ◽  
Yasuhiko Hayashi ◽  
...  

2009 ◽  
Vol 30 (7) ◽  
pp. 709-711 ◽  
Author(s):  
Do-Yoon Kim ◽  
Jun Hee Choi ◽  
A.R. Zoulkarneev ◽  
Min Ho Yang ◽  
In Taek Han ◽  
...  

2004 ◽  
Vol 400 (1-3) ◽  
pp. 139-144 ◽  
Author(s):  
In Taek Han ◽  
Bum Kwon Kim ◽  
Ha Jin Kim ◽  
Mino Yang ◽  
Yong Wan Jin ◽  
...  

2013 ◽  
Vol 12 (03) ◽  
pp. 1330001
Author(s):  
NORMAN A. DRAEGER

A discussion is presented of some of the work reported during the early 21st century describing modifications to field emitter arrays (FEAs). Discussion is focused on FEAs of metals ( Mo and Si ), of ZnO , and of carbon nanotubes (CNTs). Particular attention is given to modifications that lower the FEA turn-on field, and to the "screening effect" of closely packed emitters in an FEA. Hydrothermal synthesis briefly is described as a preparation technique.


2000 ◽  
Vol 633 ◽  
Author(s):  
Jung Inn Sohn ◽  
Seonghoon Lee ◽  
Yoon-Ho Song ◽  
Sung-Yool Choi ◽  
Kyoung-Ik Cho ◽  
...  

AbstractWe have grown well-aligned carbon nanotube arrays by thermal chemical vapor deposition at 800°C on Fe nanoparticles deposited by a pulsed laser on a porous Si substrate. Porous Si substrates were prepared by the electrochemical etching of p-Si(100) wafers with resistivities of 3 to 6 ωcm. These well-aligned carbon nanotube field emitter arrays are suitable for electron emission applications such as cold-cathode flat panel displays and vacuum microelectronic devices like microwave power amplifier tubes. Field emission characterization has been performed on the CNT-cathode diode device at room temperature and in a vacuum chamber below 10−6 Torr. The anode is maintained at a distance of 60[.proportional]m away from the carbon nanotube cathode arrays through an insulating spacer of polyvinyl film. The measured field emitting area is 4.0×10−5cm2. Our carbon nanotube field emitter arrays emit 1mA/cm2at the electric field, 2V/[.proportional]m. And they emit a large current density as high as 80mA/cm2 at 3V/[.proportional]m. The open tip structure of our carbon nanotubes and their good adhesion through Fe nanoparticles to the Si substrate are part of the reason why we can attain a large field emission current density within a low field. The field emitter arrays in our diode device are vertically well-aligned carbon nanotubes on the Si-wafer substrate.


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