Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate

2007 ◽  
Vol 515 (10) ◽  
pp. 4517-4521 ◽  
Author(s):  
S. Arulkumaran ◽  
Z.H. Liu ◽  
G.I. Ng ◽  
W.C. Cheong ◽  
R. Zeng ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Silicon Substrate ◽  
High Electron Mobility Transistors ◽  
High Resistivity ◽  
High Electron ◽  
Temperature Dependent ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
High Resistivity Silicon

Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon withFT= 143 GHz

2010 ◽  
Vol 3 (9) ◽  
pp. 094101 ◽  
Author(s):  
Haifeng Sun ◽  
Andreas R. Alt ◽  
Hansruedi Benedickter ◽  
C. R. Bolognesi ◽  
Eric Feltin ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Resistivity ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
High Resistivity Silicon

Improved recess-ohmics in AlGaN/GaN high-electron-mobility transistors with AlN spacer layer on silicon substrate

2010 ◽  
Vol 7 (10) ◽  
pp. 2412-2414 ◽  
Author(s):  
Subramaniam Arulkumaran ◽  
Ng Geok Ing ◽  
Vicknesh Sahmuganathan ◽  
Liu Zhihong ◽  
Bryan Maung
Keyword(s):  
Electron Mobility ◽  
Silicon Substrate ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
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