1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

2012 ◽  
Vol 33 (10) ◽  
pp. 1375-1377 ◽  
Author(s):  
Susai Lawrence Selvaraj ◽  
Arata Watanabe ◽  
Akio Wakejima ◽  
Takashi Egawa
Keyword(s):  
Breakdown Voltage ◽  
Electron Mobility ◽  
Silicon Substrate ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Improved breakdown voltage and RF characteristics in AlGaN/GaN high-electron-mobility transistors achieved by slant field plates

2014 ◽  
Vol 7 (9) ◽  
pp. 096501 ◽  
Author(s):  
Kengo Kobayashi ◽  
Shinya Hatakeyama ◽  
Tomohiro Yoshida ◽  
Yuhei Yabe ◽  
Daniel Piedra ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors

2020 ◽  
Vol 217 (5) ◽  
pp. 1900766
Author(s):  
Sandeep Kumar ◽  
Surani Bin Dolmanan ◽  
Sudhiranjan Tripathy ◽  
Rangarajan Muralidharan ◽  
Digbijoy Neelim Nath
Keyword(s):  
Breakdown Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Improved recess-ohmics in AlGaN/GaN high-electron-mobility transistors with AlN spacer layer on silicon substrate

2010 ◽  
Vol 7 (10) ◽  
pp. 2412-2414 ◽  
Author(s):  
Subramaniam Arulkumaran ◽  
Ng Geok Ing ◽  
Vicknesh Sahmuganathan ◽  
Liu Zhihong ◽  
Bryan Maung
Keyword(s):  
Electron Mobility ◽  
Silicon Substrate ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
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