Thermal stability of tungsten–titanium diffusion barriers for silver metallization

2008 ◽  
Vol 516 (21) ◽  
pp. 7451-7457 ◽  
Author(s):  
S.K. Bhagat ◽  
N.D. Theodore ◽  
T.L. Alford
Keyword(s):  
Thermal Stability ◽  
Diffusion Barriers ◽  
Titanium Diffusion ◽  
Thermal Stability Of

On the thermal stability of physically-vapor-deposited diffusion barriers in 3D Through-Silicon Vias during IC processing

2013 ◽  
Vol 106 ◽  
pp. 155-159 ◽  
Author(s):  
Yann Civale ◽  
Kristof Croes ◽  
Yuichi Miyamori ◽  
Dimitrios Velenis ◽  
Augusto Redolfi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Diffusion Barriers ◽  
Through Silicon Vias ◽  
Silicon Vias ◽  
Thermal Stability Of

Enhanced thermal stability of TA-based thin diffusion barriers by ion implantation

Vacuum ◽  
2002 ◽  
Vol 69 (1-3) ◽  
pp. 91-95 ◽  
Author(s):  
M Peikert ◽  
E Wieser ◽  
H Reuter ◽  
C Wenzel
Keyword(s):  
Thermal Stability ◽  
Ion Implantation ◽  
Diffusion Barriers ◽  
Thermal Stability Of

The formation and thermal stability of multilayer ohmic contacts to n-GaAs with TiBx and Mo diffusion barriers

2000 ◽  
Vol 45 (11) ◽  
pp. 1452-1456
Author(s):  
V. V. Milenin ◽  
R. V. Konakova ◽  
V. N. Ivanov ◽  
G. V. Beketov ◽  
V. I. Poludin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contacts ◽  
Diffusion Barriers ◽  
Thermal Stability Of

Diffusion barriers for CeFe4Sb12/Cu thermoelectric devices

2013 ◽  
Vol 1490 ◽  
pp. 197-202 ◽  
Author(s):  
Laetitia Boulat ◽  
Romain Viennois ◽  
Didier Ravot ◽  
Nicole Fréty
Keyword(s):  
Thermal Stability ◽  
Thermoelectric Material ◽  
Diffusion Barrier ◽  
Copper Electrode ◽  
Diffusion Barriers ◽  
Tantalum Nitride ◽  
Thermoelectric Devices ◽  
Microstructural Study ◽  
Copper Material ◽  
Thermal Stability Of

ABSTRACTThe efficiency of a tantalum nitride interlayer as a diffusion barrier for CeFe4Sb12 thermoelectric material against electrode copper material has been investigated. The thermal stability of CeFe4Sb12/TaN/Cu stackings has been investigated after annealing at 600°C from a microstructural study. CeFe4Sb12 and Cu appear to chemically react through the formation of CeCu2 and Cu2Sb phases whereas no reaction is observed for CeFe4Sb12 with TaN. This study showed that the TaN interlayer cannot inhibit the diffusion of Sb from the skutterudite substrate to the copper electrode but prevents the diffusion of Ce and consequently the formation of the CeCu2 phase.

Thermal stability of Al–O–N PVD diffusion barriers

1998 ◽  
Vol 108-109 ◽  
pp. 48-58 ◽  
Author(s):  
R. Cremer ◽  
M. Witthaut ◽  
K. Reichert ◽  
M. Schierling ◽  
D. Neuschütz
Keyword(s):  
Thermal Stability ◽  
Diffusion Barriers ◽  
Thermal Stability Of

scholarly journals Effect of B4C diffusion barriers on the thermal stability of Sc/Si periodic multilayers

2010 ◽  
Vol 604 (11-12) ◽  
pp. 1015-1021 ◽  
Author(s):  
Philippe Jonnard ◽  
Hélène Maury ◽  
Karine Le Guen ◽  
Jean-Michel André ◽  
Nicola Mahne ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Diffusion Barriers ◽  
Thermal Stability Of

Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts to n-GaN

2007 ◽  
Vol 36 (12) ◽  
pp. 1662-1668 ◽  
Author(s):  
L.F. Voss ◽  
L. Stafford ◽  
R. Khanna ◽  
B.P. Gila ◽  
C.R. Abernathy ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contacts ◽  
Diffusion Barriers ◽  
Thermal Stability Of

Thermal Stability of Hafnium and Titanium Nitride Diffusion Barriers in Multilayer Contacts to Silicon

1983 ◽  
Vol 130 (5) ◽  
pp. 1215-1218 ◽  
Author(s):  
I. Suni ◽  
M. Mäenpää ◽  
M. ‐A. Nicolet ◽  
M. Luomajärvi
Keyword(s):  
Thermal Stability ◽  
Titanium Nitride ◽  
Diffusion Barriers ◽  
Thermal Stability Of
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