Diffusion barriers for CeFe4Sb12/Cu thermoelectric devices

2013 ◽  
Vol 1490 ◽  
pp. 197-202 ◽  
Author(s):  
Laetitia Boulat ◽  
Romain Viennois ◽  
Didier Ravot ◽  
Nicole Fréty
Keyword(s):  
Thermal Stability ◽  
Thermoelectric Material ◽  
Diffusion Barrier ◽  
Copper Electrode ◽  
Diffusion Barriers ◽  
Tantalum Nitride ◽  
Thermoelectric Devices ◽  
Microstructural Study ◽  
Copper Material ◽  
Thermal Stability Of

ABSTRACTThe efficiency of a tantalum nitride interlayer as a diffusion barrier for CeFe4Sb12 thermoelectric material against electrode copper material has been investigated. The thermal stability of CeFe4Sb12/TaN/Cu stackings has been investigated after annealing at 600°C from a microstructural study. CeFe4Sb12 and Cu appear to chemically react through the formation of CeCu2 and Cu2Sb phases whereas no reaction is observed for CeFe4Sb12 with TaN. This study showed that the TaN interlayer cannot inhibit the diffusion of Sb from the skutterudite substrate to the copper electrode but prevents the diffusion of Ce and consequently the formation of the CeCu2 phase.

An optimal quasisuperlattice design to further improve thermal stability of tantalum nitride diffusion barriers

2000 ◽  
Vol 76 (20) ◽  
pp. 2895-2897 ◽  
Author(s):  
G. S. Chen ◽  
S. C. Huang ◽  
S. T. Chen ◽  
T. J. Yang ◽  
P. Y. Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Diffusion Barriers ◽  
Tantalum Nitride ◽  
Thermal Stability Of

Thermal stability of PECVD W-B-N thin film as a diffusion barrier

1997 ◽  
Author(s):  
YongTae Kim ◽  
Dong J. Kim ◽  
Chang W. Lee ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Diffusion Barrier ◽  
Thermal Stability Of

On the thermal stability of physically-vapor-deposited diffusion barriers in 3D Through-Silicon Vias during IC processing

2013 ◽  
Vol 106 ◽  
pp. 155-159 ◽  
Author(s):  
Yann Civale ◽  
Kristof Croes ◽  
Yuichi Miyamori ◽  
Dimitrios Velenis ◽  
Augusto Redolfi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Diffusion Barriers ◽  
Through Silicon Vias ◽  
Silicon Vias ◽  
Thermal Stability Of

scholarly journals Investigation of reactively sputtered TaN thin-film resistors for microwave photonic applications

2021 ◽  
pp. 93-98
Author(s):  
Evgenii Erofeev ◽  
Egor Polyntsev ◽  
Sergei Ishutkin
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Magnetron Sputtering ◽  
Electrical Resistance ◽  
High Thermal Stability ◽  
Tantalum Nitride ◽  
Reactive Magnetron ◽  
Microwave Photonic ◽  
Thin Film Resistors ◽  
Thermal Stability Of

Electrophysical characteristics and their thermal stability of thin-film resistors based on tantalum nitride (TaN) obtained by reactive magnetron sputtering were investigated. The optimal modes of the magnetron sputtering process are determined, ensuring the Ta2N phase film composition with the value of the specific electrical resistance of 250 μm cm and high thermal stability of the parameters. On the basis of the investigations carried out, thin-film matching resistors were manufactured for use as part of an electro-optical InP-based MZ modulator

Thermal stability of ultra thin Zr-B-N films as diffusion barrier between Cu and Si

2020 ◽  
Vol 527 ◽  
pp. 146810
Author(s):  
Y. Meng ◽  
Z.X. Song ◽  
Y.H. Li ◽  
D. Qian ◽  
W. Hu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Diffusion Barrier ◽  
Thermal Stability Of
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