Dielectric and structural characterization of KNbO3 ferroelectric thin films epitaxially grown by pulsed laser deposition on Nb doped SrTiO3

2010 ◽  
Vol 518 (12) ◽  
pp. 3432-3438 ◽  
Author(s):  
D. Fasquelle ◽  
A. Rousseau ◽  
M. Guilloux-Viry ◽  
S. Députier ◽  
A. Perrin ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Structural Characterization ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Structural characterization of epitaxial Cu2Mo6S8 thin films grown on R-cut sapphire by pulsed laser deposition

1999 ◽  
Vol 353 (1-2) ◽  
pp. 62-66 ◽  
Author(s):  
N. Lemée ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
M. Kugler ◽  
Ø. Fischer ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Structural Characterization ◽  
Pulsed Laser ◽  
Laser Deposition

Preparation and characterization of Bi4Ti3O12–SrBi4Ti4O15 ferroelectric thin films by pulsed laser deposition

2002 ◽  
Vol 237-239 ◽  
pp. 478-481 ◽  
Author(s):  
Minoru Noda ◽  
Toshiyuki Nakaiso ◽  
Kentaro Takarabe ◽  
Kazushi Kodama ◽  
Masanori Okuyama
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition

Processing and characterization of ferroelectric thin films obtained by pulsed laser deposition

2005 ◽  
Vol 25 (12) ◽  
pp. 2299-2303 ◽  
Author(s):  
F. Craciun ◽  
M. Dinescu ◽  
P. Verardi ◽  
N. Scarisoreanu ◽  
A. Moldovan ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition

Structural characterization of TiO2 thin films obtained by pulsed laser deposition

1999 ◽  
Vol 137 (1-4) ◽  
pp. 38-44 ◽  
Author(s):  
L. Escobar-Alarcón ◽  
E. Haro-Poniatowski ◽  
M.A. Camacho-López ◽  
M. Fernández-Guasti ◽  
J. Jı́menez-Jarquı́n ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Structural Characterization ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tio2 Thin Films
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