Preparation and characterization of Bi4Ti3O12–SrBi4Ti4O15 ferroelectric thin films by pulsed laser deposition

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

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Processing and characterization of ferroelectric thin films obtained by pulsed laser deposition

Journal of the European Ceramic Society ◽

10.1016/j.jeurceramsoc.2005.03.062 ◽

2005 ◽

Vol 25 (12) ◽

pp. 2299-2303 ◽

Cited By ~ 11

Author(s):

F. Craciun ◽

M. Dinescu ◽

P. Verardi ◽

N. Scarisoreanu ◽

A. Moldovan ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Laser Deposition

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Dielectric and structural characterization of KNbO3 ferroelectric thin films epitaxially grown by pulsed laser deposition on Nb doped SrTiO3

Thin Solid Films ◽

10.1016/j.tsf.2010.01.005 ◽

2010 ◽

Vol 518 (12) ◽

pp. 3432-3438 ◽

Cited By ~ 5

Author(s):

D. Fasquelle ◽

A. Rousseau ◽

M. Guilloux-Viry ◽

S. Députier ◽

A. Perrin ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Structural Characterization ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Laser Deposition

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SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:20011121 ◽

2001 ◽

Vol 11 (PR11) ◽

pp. Pr11-133-Pr11-137

Author(s):

J. R. Duclère ◽

M. Guilloux-Viry ◽

A. Perrin ◽

A. Dauscher ◽

S. Weber ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Laser Deposition ◽

Platinum Electrodes

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Preparation and characterization of CuSbSe2 thin films deposited by pulsed laser deposition

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.105716 ◽

2021 ◽

Vol 127 ◽

pp. 105716

Author(s):

Tianzhen Guo ◽

Dan Wang ◽

Yajun Yang ◽

Xiaoyong Xiong ◽

Kelin Li ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition

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Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

Advances in Science and Technology ◽

10.4028/www.scientific.net/ast.75.202 ◽

2010 ◽

Vol 75 ◽

pp. 202-207

Author(s):

Victor Ríos ◽

Elvia Díaz-Valdés ◽

Jorge Ricardo Aguilar ◽

T.G. Kryshtab ◽

Ciro Falcony

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Room Temperature ◽

Pulsed Laser ◽

Chemical Characterization ◽

Laser Deposition ◽

Nominal Composition ◽

Deposition Parameters ◽

The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

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