Changes in electrical and structural properties of indium oxide thin films through post-deposition annealing

2011 ◽  
Vol 520 (1) ◽  
pp. 110-116 ◽  
Author(s):  
Kazuhiro Kato ◽  
Hideo Omoto ◽  
Takao Tomioka ◽  
Atsushi Takamatsu
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Indium Oxide ◽  
Oxide Thin Films ◽  
Post Deposition Annealing ◽  
Post Deposition

scholarly journals The effect of post-deposition annealing conditions on structural and thermoelectric properties of sputtered copper oxide films

RSC Advances ◽  
2020 ◽  
Vol 10 (49) ◽  
pp. 29394-29401
Author(s):  
Chandrasekaran Abinaya ◽  
Kevin Bethke ◽  
Virgil Andrei ◽  
Jonas Baumann ◽  
Beatrix Pollakowski-Herrmann ◽  
...  
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Thermoelectric Properties ◽  
Oxide Films ◽  
Thermoelectric Performance ◽  
Annealing Atmosphere ◽  
Oxide Thin Films ◽  
Post Deposition Annealing ◽  
Annealing Conditions ◽  
Post Deposition

This study reveals the interplay between the composition and thermoelectric performance of mixed copper oxide thin films, which can be finely adjusted by varying the annealing atmosphere.

Post-deposition annealing of sputtered zinc-oxide thin films

1984 ◽  
Vol 2 (3) ◽  
pp. 237-241 ◽  
Author(s):  
M. Bertolotti ◽  
A. Ferrari ◽  
D. Seite ◽  
A. Jaskow ◽  
A. Palma ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Oxide Thin Films ◽  
Post Deposition Annealing ◽  
Post Deposition

scholarly journals Structural Evolution of Sputtered Indium Oxide Thin Films

2010 ◽  
Vol 61 (6) ◽  
pp. 382-385 ◽  
Author(s):  
Ivan Hotový ◽  
Thomas Kups ◽  
Juraj Hotový ◽  
Jozef Liday ◽  
Dalibor Búc ◽  
...  
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Room Temperature ◽  
Structural Evolution ◽  
Nanocrystalline Structure ◽  
Rhombohedral Phase ◽  
Silicon Substrates ◽  
Oxide Thin Films ◽  
Reactive Mixture ◽  
Post Deposition

Structural Evolution of Sputtered Indium Oxide Thin Films The indium oxide thin films were deposited at room temperature by reactive magnetron sputtering in the mixture of oxygen and argon on silicon and oxidized silicon substrates. The influence of the oxygen flow in the reactive mixture and post-deposition annealing on the structural properties were investigated. The as deposited In2O3 films showed a dominating randomly oriented nanocrystalline structure of cubic In2O3. The grain size decreased with increasing oxygen concentration in the plasma. Annealing in reducing atmospheres (vacuum, nitrogen and argon), besides improving the crystallinity, led to a partial cubic to rhombohedral phase transition in the indium oxide films.

Influence of post-deposition annealing on the electrical properties of zinc oxide thin films

2014 ◽  
Vol 573 ◽  
pp. 22-26 ◽  
Author(s):  
Hui Kyung Park ◽  
Jaeseung Jo ◽  
Hee Kyeung Hong ◽  
Jaeyeong Heo
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Oxide Thin Films ◽  
Post Deposition Annealing ◽  
Post Deposition
Sign in / Sign up

Export Citation Format

Share Document