Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

2014 ◽  
Vol 558 ◽  
pp. 279-282 ◽  
Author(s):  
Jae-Sung Kim ◽  
Min-Kyu Joo ◽  
Ming Xing Piao ◽  
Seung-Eon Ahn ◽  
Yong-Hee Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Contact Area ◽  
Thin Film Transistors ◽  
Extended Contact ◽  
Amorphous Ingazno

scholarly journals Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties

RSC Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 5622-5628 ◽  
Author(s):  
Yunyong Nam ◽  
Hee-Ok Kim ◽  
Sung Haeng Cho ◽  
Sang-Hee Ko Park
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Aluminum Oxide ◽  
Thin Film Transistors ◽  
Hydrogen Diffusion ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Layer Deposition ◽  
Amorphous Ingazno

We fabricated amorphous InGaZnO thin film transistors (a-IGZO TFTs) with aluminum oxide (Al2O3) as a gate insulator grown through atomic layer deposition (ALD) method at different deposition temperatures (Tdep).

Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers

2013 ◽  
Vol 52 (9R) ◽  
pp. 090205 ◽  
Author(s):  
Runze Zhan ◽  
Chengyuan Dong ◽  
Bo-Ru Yang ◽  
Han-Ping D. Shieh
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Amorphous Ingazno

High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing

2021 ◽  
Vol 42 (10) ◽  
pp. 1480-1483
Author(s):  
Yining Yu ◽  
Nannan Lv ◽  
Dongli Zhang ◽  
Yiran Wei ◽  
Mingxiang Wang
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Low Temperature Annealing ◽  
Amorphous Ingazno
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