Effect of Sputtering Working Pressure on the Optical and Electrical Properties of InZnO Thin-Film Transistors

2020 ◽  
Vol 30 (4) ◽  
pp. 211-216
Author(s):  
Ji-Min Park ◽  
Hyoung-Do Kim ◽  
Seong Cheol Jang ◽  
Hyun-Suk Kim
2009 ◽  
Vol 30 (3) ◽  
pp. 033001 ◽  
Author(s):  
Zhu Xiaming ◽  
Wu Huizhen ◽  
Wang Shuangjiang ◽  
Zhang Yingying ◽  
Cai Chunfeng ◽  
...  

2021 ◽  
Vol 902 ◽  
pp. 65-70
Author(s):  
Samar Aboulhadeed ◽  
Mohsen Ghali ◽  
Mohamad M. Ayad

We report on a development of the structural, optical and electrical properties of poly (3,4-ethylenedioxythiophene)-poly (styrenesulfonate) (PEDOT:PSS) conducting polymer thin films. The PEDOT:PSS thin films were deposited by a controlled thin film applicator and their physical properties were found to be effectively modified by isopropanol. The deposited films were investigated by several techniques including XRD, UV–Vis, SPM and Hall-effect. Interestingly, by optimizing the PEDOTS:PSS/ISO volume ratio (v:v), we find that the film charge carriers type can be switched from p to n-type with a high bulk carriers concentration reaching 6×1017 cm-3. Moreover, the film surface roughness becomes smoother and reaching a small value of only 1.9 nm. Such development of the PEDOT:PSS film properties makes it very promising to act as an electron transport layer for different energy applications.


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