H2 annealing effect on the structural and electrical properties of amorphous InGaZnO films for thin film transistors

2013 ◽  
Vol 378 ◽  
pp. 50-54 ◽  
Author(s):  
Yuanjie Li ◽  
Zilong Liu ◽  
Kai Jiang ◽  
Xiaofen Hu
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
Annealing Effect ◽  
Structural And Electrical Properties ◽  
Amorphous Ingazno

Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

2014 ◽  
Vol 558 ◽  
pp. 279-282 ◽  
Author(s):  
Jae-Sung Kim ◽  
Min-Kyu Joo ◽  
Ming Xing Piao ◽  
Seung-Eon Ahn ◽  
Yong-Hee Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Contact Area ◽  
Thin Film Transistors ◽  
Extended Contact ◽  
Amorphous Ingazno

scholarly journals Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties

RSC Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 5622-5628 ◽  
Author(s):  
Yunyong Nam ◽  
Hee-Ok Kim ◽  
Sung Haeng Cho ◽  
Sang-Hee Ko Park
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Aluminum Oxide ◽  
Thin Film Transistors ◽  
Hydrogen Diffusion ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Layer Deposition ◽  
Amorphous Ingazno

We fabricated amorphous InGaZnO thin film transistors (a-IGZO TFTs) with aluminum oxide (Al2O3) as a gate insulator grown through atomic layer deposition (ALD) method at different deposition temperatures (Tdep).

Annealing effect in structural and electrical properties of sputtered Mo thin film

2015 ◽  
Vol 334 ◽  
pp. 129-137 ◽  
Author(s):  
P. Chelvanathan ◽  
Z. Zakaria ◽  
Y. Yusoff ◽  
M. Akhtaruzzaman ◽  
M.M. Alam ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Annealing Effect ◽  
Structural And Electrical Properties
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