Comparative study about Al-doped zinc oxide thin films deposited by Pulsed Electron Deposition and Radio Frequency Magnetron Sputtering as Transparent Conductive Oxide for Cu(In,Ga)Se 2 -based solar cells

2015 ◽  
Vol 582 ◽  
pp. 317-322 ◽  
Author(s):  
F. Pattini ◽  
F. Annoni ◽  
F. Bissoli ◽  
M. Bronzoni ◽  
J.P. Garcia ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Magnetron Sputtering ◽  
Comparative Study ◽  
Radio Frequency ◽  
Transparent Conductive Oxide ◽  
Radio Frequency Magnetron Sputtering ◽  
Conductive Oxide ◽  
Pulsed Electron Deposition

Crystallization of amorphous indium zinc oxide thin films produced by radio-frequency magnetron sputtering

2008 ◽  
Vol 516 (7) ◽  
pp. 1374-1376 ◽  
Author(s):  
G. Gonçalves ◽  
P. Barquinha ◽  
L. Raniero ◽  
R. Martins ◽  
E. Fortunato
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Oxide Thin Films ◽  
Indium Zinc Oxide

MANIPULATING THE STRUCTURAL AND ELECTRICAL PROPERTIES OF ZINC OXIDE THIN FILMS BY CHANGING THE SPUTTERING POWER OF RADIO FREQUENCY MAGNETRON SPUTTERING

2017 ◽  
Vol 24 (Supp01) ◽  
pp. 1850006 ◽  
Author(s):  
YANG WANG ◽  
CHENGBIAO WANG ◽  
ZHIJIAN PENG ◽  
QI WANG ◽  
XIULI FU
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Resistivity ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Interstitial Zinc ◽  
Sputtering Power

Oxygen-deficient zinc oxides thin films with different levels of defects were prepared by using radio frequency magnetron sputtering method with sintered zinc oxide disk as target at different sputtering powers. The composition, structure and electrical properties of the prepared films were investigated. Under the present conditions, all the obtained films possessed würtzite structure, which were growing preferentially along the [Formula: see text]-axis. The thickness of the films, the size of the zinc oxide grains and the content of Zn atoms increased with increasing sputtering power. In the films deposited at a sputtering power from 52[Formula: see text]W to 212[Formula: see text]W, the main defect was interstitial zinc. With increasing sputtering power, due to the enhanced number of interstitial zinc in the films, their room-temperature electrical resistivity would decrease, which was controlled by electron conduction. At increasing measurement temperature, their electrical resistivity would increase, owing to the decrease of defect concentration caused by oxidization.

Comparative study of annealing and oxidation effects in a-SiC:H and a-SiC thin films deposited by radio-frequency magnetron sputtering

2011 ◽  
Vol 519 (7) ◽  
pp. 2218-2224 ◽  
Author(s):  
A.V. Vasin ◽  
Sh. Muto ◽  
Yu. Ishikawa ◽  
A.V. Rusavsky ◽  
T. Kimura ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Comparative Study ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering
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