scholarly journals Low pressure chemical vapour deposition of BN: Relationship between gas phase chemistry and coating microstructure

2018 ◽  
Vol 664 ◽  
pp. 106-114 ◽  
Author(s):  
P. Carminati ◽  
T. Buffeteau ◽  
N. Daugey ◽  
G. Chollon ◽  
F. Rebillat ◽  
...  
2001 ◽  
Vol 3 (17) ◽  
pp. 3471-3485 ◽  
Author(s):  
Michael N. R. Ashfold ◽  
Paul W. May ◽  
James R. Petherbridge ◽  
Keith N. Rosser ◽  
James A. Smith ◽  
...  

2017 ◽  
Vol 53 (76) ◽  
pp. 10482-10495 ◽  
Author(s):  
Michael N. R. Ashfold ◽  
Edward J. D. Mahoney ◽  
Sohail Mushtaq ◽  
Benjamin S. Truscott ◽  
Yuri A. Mankelevich

The gas-phase chemistry underpinning the chemical vapour deposition of diamond from microwave-activated methane/hydrogen plasmas is surveyed.


1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-395-Pr8-402 ◽  
Author(s):  
B. Armas ◽  
M. de Icaza Herrera ◽  
C. Combescure ◽  
F. Sibieude ◽  
D. Thenegal

2001 ◽  
Vol 231 (1-2) ◽  
pp. 242-247 ◽  
Author(s):  
K. Shalini ◽  
Anil U. Mane ◽  
S.A. Shivashankar ◽  
M. Rajeswari ◽  
S. Choopun

Vacuum ◽  
2021 ◽  
Vol 189 ◽  
pp. 110253
Author(s):  
Yujia Jiao ◽  
Qian Jiang ◽  
Junhua Meng ◽  
Jinliang Zhao ◽  
Zhigang Yin ◽  
...  

2003 ◽  
Vol 93 ◽  
pp. 453-458 ◽  
Author(s):  
H. Mahfoz-Kotb ◽  
A.C. Salaün ◽  
T. Mohammed-Brahim ◽  
F. Bendriaa ◽  
F. Le Bihan ◽  
...  

1992 ◽  
Vol 70 (10-11) ◽  
pp. 946-948
Author(s):  
S. B. Hewitt ◽  
S.-P. Tay ◽  
N. G. Tarr ◽  
A. R. Boothroyd

Stoichiometric SiC films formed by low-pressure chemical vapour deposition from a di-tert-butylsilane source with in situ phosphorus doping from tert-butylphosphine were used as emitters in heterojunction diodes fabricated on lightly doped silicon substrates. Diode characteristics are nearly ideal, with forward current dominated by injection-diffusion in the silicon substrate.


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