Unravelling aspects of the gas phase chemistry involved in diamond chemical vapour deposition

2001 ◽  
Vol 3 (17) ◽  
pp. 3471-3485 ◽  
Author(s):  
Michael N. R. Ashfold ◽  
Paul W. May ◽  
James R. Petherbridge ◽  
Keith N. Rosser ◽  
James A. Smith ◽  
...  
Keyword(s):  
Gas Phase ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

scholarly journals What [plasma used for growing] diamond can shine like flame?

2017 ◽  
Vol 53 (76) ◽  
pp. 10482-10495 ◽  
Author(s):  
Michael N. R. Ashfold ◽  
Edward J. D. Mahoney ◽  
Sohail Mushtaq ◽  
Benjamin S. Truscott ◽  
Yuri A. Mankelevich
Keyword(s):  
Gas Phase ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Gas Phase Chemistry ◽  
Hydrogen Plasmas ◽  
Phase Chemistry

The gas-phase chemistry underpinning the chemical vapour deposition of diamond from microwave-activated methane/hydrogen plasmas is surveyed.

Controlling reaction paths for ultra-fast growth of inorganic nanowires floating in the gas phase

Nanoscale ◽  
2021 ◽  
Author(s):  
Richard S. Schäufele ◽  
Miguel Vazquez-Pufleau ◽  
Afshin Pendashteh ◽  
Juan J. Vilatela
Keyword(s):  
Gas Phase ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Growth Parameters ◽  
Chemical Vapour ◽  
Selective Growth ◽  
Fast Growth ◽  
Reaction Paths ◽  
Inorganic Nanowires

Identification and understanding of selective growth parameters of 1D nanomaterials by floating catalysts chemical vapour deposition.

Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature

2010 ◽  
Vol 645-648 ◽  
pp. 127-130 ◽  
Author(s):  
Nikoletta Jegenyes ◽  
Jean Lorenzzi ◽  
Véronique Soulière ◽  
Jacques Dazord ◽  
François Cauwet ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Gas Phase ◽  
Chemical Vapour Deposition ◽  
Growth Temperature ◽  
Vapour Deposition ◽  
Defect Density ◽  
Chemical Vapour ◽  
Defect Size ◽  
Homoepitaxial Growth

Starting from 3C-SiC(111) layers grown by Vapour-Liquid-Solid mechanism, homoepitaxial growth by Chemical Vapour Deposition was carried out on top of these seeds. The effect of the growth temperature and of the C/Si ratio in the gas phase was investigated on the surface morphology, the roughness and the defect density. It was found that the initial highly step-bunched surface of the VLS seeds could be greatly smoothen using appropriate conditions. These conditions were also found to reduce significantly the defect size and/or density at the surface.

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