Thickness-dependence of growth rate, dielectric response, and capacitance properties in Ba0.67Sr0.33TiO3/LaNiO3 hetero-structure thin films for film capacitor applications

AbstractThe kinetics of the deposition of ruthenium thin films from the hydrogen assisted reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II), [Ru(tmhd)2cod], in supercritical carbon dioxide was studied in order to develop a rate expression for the growth rate as well as to determine a mechanism for the process. The deposition temperature was varied from 240°C to 280°C and the apparent activation energy was 45.3 kJ/mol. Deposition rates up to 30 nm/min were attained. The deposition rate dependence on precursor concentrations between 0 and 0.2 wt. % was studied at 260°C with excess hydrogen and revealed first order deposition kinetics with respect to precursor at concentrations lower then 0.06 wt. % and zero order dependence at concentrations above 0.06 wt. %. The effect of reaction pressure on the growth rate was studied at a constant reaction temperature of 260°C and pressures between 159 bar to 200 bar and found to have no measurable effect on the growth rate.

Download Full-text

The thickness dependence of the crystallization behavior in sandwiched amorphous Ge2Sb2Te5 thin films

Physica B Condensed Matter ◽

10.1016/j.physb.2011.09.003 ◽

2011 ◽

Vol 406 (23) ◽

pp. 4436-4439 ◽

Cited By ~ 5

Author(s):

G. Bai ◽

R. Li ◽

H.N. Xu ◽

Y.D. Xia ◽

Z.G. Liu ◽

...

Keyword(s):

Thin Films ◽

Crystallization Behavior ◽

Thickness Dependence

Download Full-text

Thickness dependence of the properties of epitaxial barium strontium titanate thin films

Physics of the Solid State ◽

10.1134/s1063783415080314 ◽

2015 ◽

Vol 57 (8) ◽

pp. 1529-1534 ◽

Cited By ~ 5

Author(s):

V. B. Shirokov ◽

Yu. I. Golovko ◽

V. M. Mukhortov ◽

Yu. I. Yuzyuk ◽

P. E. Janolin ◽

...

Keyword(s):

Thin Films ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Thickness Dependence ◽

Barium Strontium

Download Full-text

Effect of Interface and Crystallinity on the Ferroelectric Properties of Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer Thin Films

MRS Proceedings ◽

10.1557/proc-665-c10.10 ◽

2001 ◽

Vol 665 ◽

Author(s):

Feng Xia ◽

H.S. Xu ◽

Babak Razavi ◽

Q. M. Zhang

Keyword(s):

Thin Films ◽

Vinylidene Fluoride ◽

Ferroelectric Properties ◽

Large Change ◽

Thickness Dependence ◽

Dielectric Measurement ◽

Switching Speed ◽

Wide Range ◽

Poly Vinylidene Fluoride ◽

Polarization Level

ABSTRACTFerroelectric polymer thin films are attractive for a wide range of applications such as MEMS, IR sensors, and memory devices. We present the results of a recent investigation on the thickness dependence of the ferroelectric properties of poly(vinylidene fluoridetrifluoroethylene) copolymer spin cast films on electroded Si substrate. We show that as the film thickness is reduced, there exist two thickness regions. For films at thickness above 100 nm, the thickness dependence of the ferroelectric properties can be attributed to the interface effect. However, for thinner films, there is a large change in the ferroelectric properties such as the polarization level, the coercive field, and polarization switching speed, which is related to the large drop of the crystallinity in the ultrathin film region (below 100 nm). The results from Xray, dielectric measurement, and AFM all indicate that there is a threshold thickness at about 100 nm below which the crystallinity in the film reduces abruptly.

Download Full-text