Effects of oxygen partial pressure on the structural and electrical properties of Al and Sb co-doped p-type ZnO thin films grown by pulsed laser deposition

2020 ◽  
Vol 708 ◽  
pp. 138130
Author(s):  
Han-sol Koo ◽  
Jung-A. Lee ◽  
Young-Woo Heo ◽  
Joon-Hyung Lee ◽  
Hee Young Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Structural And Electrical Properties ◽  
P Type ◽  
Co Doped

Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition

2011 ◽  
Vol 383-390 ◽  
pp. 6289-6292
Author(s):  
Jian Ting He ◽  
Bo Xue Tan ◽  
Qin Qin Wei ◽  
Yuan Bin Su ◽  
Shu Lian Yang
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
X Ray ◽  
Partial Pressures

ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.

scholarly journals Effects of Oxygen Partial Pressure and Substrate Temperature on the Structure and Morphology of Sc and Y Co-Doped ZrO2 Solid Electrolyte Thin Films Prepared via Pulsed Laser Deposition

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 410
Author(s):  
Jennet R. Rabo ◽  
Makoto Takayanagi ◽  
Takashi Tsuchiya ◽  
Hideki Nakajima ◽  
Kazuya Terabe ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Partial Pressures ◽  
Substrate Temperatures ◽  
Co Doped

Scandium (Sc) and yttrium (Y) co-doped ZrO2 (ScYSZ) thin films were prepared on a SiO2-Si substrate via pulsed laser deposition (PLD) method. In order to obtain good quality thin films with the desired microstructure, various oxygen partial pressures (PO2) from 0.01 Pa to 10 Pa and substrate temperatures (Ts) from 25 °C to 800 °C were investigated. X-ray diffraction (XRD) patterns results showed that amorphous ScYSZ thin films were formed at room substrate temperature while cubic polycrystalline thin films were obtained at higher substrate temperatures (Ts = 200 °C, 400 °C, 600 °C, 800 °C). Raman spectra revealed a distinct Raman shift at around 600 cm−1 supporting a cubic phase. However, a transition from cubic to tetragonal phase can be observed with increasing oxygen partial pressure. Photoemission spectroscopy (PES) spectra suggested supporting analysis that more oxygen vacancies in the lattice can be observed for samples deposited at lower oxygen partial pressures resulting in a cubic structure with higher dopant cation binding energies as compared to the tetragonal structure observed at higher oxygen partial pressure. On the other hand, dense morphologies can be obtained at lower  PO2 (0.01 Pa and 0.1 Pa) while more porous morphologies can be obtained at higher PO2 (1.0 Pa and 10 Pa).

XPS Analysis of ZnO Thin Films Obtained by Pulsed Laser Deposition

2011 ◽  
Vol 383-390 ◽  
pp. 6293-6296 ◽  
Author(s):  
Jian Ting He ◽  
Bo Xue Tan ◽  
Yuan Bin Su ◽  
Shu Lian Yang ◽  
Qin Qin Wei
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
X Ray ◽  
Partial Pressures

Highly c-axis oriented ZnO thin films were deposited on n-Si (111) substrate at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), Atomic force microscopy (AFM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. X-ray photoelectron spectroscopy (XPS) was used to analyze relationships between chemical shifts of XPS energy spectra and stoichiometric ratios of ZnO thin films, and quantitative relationships between content of Zn, O and oxygen partial pressures. An optimal crystallized and stoichiometric ZnO thin film was observed at the oxygen partial pressure of 6.5Pa.

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