scholarly journals Effects of Oxygen Partial Pressure and Substrate Temperature on the Structure and Morphology of Sc and Y Co-Doped ZrO2 Solid Electrolyte Thin Films Prepared via Pulsed Laser Deposition

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 410
Author(s):  
Jennet R. Rabo ◽  
Makoto Takayanagi ◽  
Takashi Tsuchiya ◽  
Hideki Nakajima ◽  
Kazuya Terabe ◽  
...  

Scandium (Sc) and yttrium (Y) co-doped ZrO2 (ScYSZ) thin films were prepared on a SiO2-Si substrate via pulsed laser deposition (PLD) method. In order to obtain good quality thin films with the desired microstructure, various oxygen partial pressures (PO2) from 0.01 Pa to 10 Pa and substrate temperatures (Ts) from 25 °C to 800 °C were investigated. X-ray diffraction (XRD) patterns results showed that amorphous ScYSZ thin films were formed at room substrate temperature while cubic polycrystalline thin films were obtained at higher substrate temperatures (Ts = 200 °C, 400 °C, 600 °C, 800 °C). Raman spectra revealed a distinct Raman shift at around 600 cm−1 supporting a cubic phase. However, a transition from cubic to tetragonal phase can be observed with increasing oxygen partial pressure. Photoemission spectroscopy (PES) spectra suggested supporting analysis that more oxygen vacancies in the lattice can be observed for samples deposited at lower oxygen partial pressures resulting in a cubic structure with higher dopant cation binding energies as compared to the tetragonal structure observed at higher oxygen partial pressure. On the other hand, dense morphologies can be obtained at lower  PO2 (0.01 Pa and 0.1 Pa) while more porous morphologies can be obtained at higher PO2 (1.0 Pa and 10 Pa).

2011 ◽  
Vol 383-390 ◽  
pp. 6289-6292
Author(s):  
Jian Ting He ◽  
Bo Xue Tan ◽  
Qin Qin Wei ◽  
Yuan Bin Su ◽  
Shu Lian Yang

ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.


2013 ◽  
Vol 760 ◽  
pp. 1-7 ◽  
Author(s):  
P. Mohanty ◽  
V. Ganeshan ◽  
Chandana Rath

Ti0.985Co0.015O2-δ thin films are deposited at 0, 0.1, 1 and 300 mTorr oxygen partial pressures by pulsed laser deposition (PLD) technique. Glancing angle x- ray diffraction (GAXRD) and micro-Raman spectroscopy show that the phase changes from rutile to anatase with increasing oxygen partial pressure. From Rutherford backscattering spectroscopic (RBS) technique, O to (Ti+Co) atomic ratio is found to increase with increasing oxygen partial pressure. Further, the simulation of RBS data while reveals non-uniform distribution of Co throughout the film deposited at 0 and 0.1 mTorr oxygen partial pressures, at 1 and 300 mTorr oxygen partial pressure, Co distribution is found to be uniform. Magnetic measurements confirm the room temperature ferromagnetism (RTFM) in all the films independent of the phase. Magnetic force microscopy (MFM) further supports the ferromagnetic nature of the films. We attribute the ferromagnetism in the films to be arisen from defects like oxygen vacancies rather than any contamination or Co clustering.


2011 ◽  
Vol 383-390 ◽  
pp. 6293-6296 ◽  
Author(s):  
Jian Ting He ◽  
Bo Xue Tan ◽  
Yuan Bin Su ◽  
Shu Lian Yang ◽  
Qin Qin Wei

Highly c-axis oriented ZnO thin films were deposited on n-Si (111) substrate at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), Atomic force microscopy (AFM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. X-ray photoelectron spectroscopy (XPS) was used to analyze relationships between chemical shifts of XPS energy spectra and stoichiometric ratios of ZnO thin films, and quantitative relationships between content of Zn, O and oxygen partial pressures. An optimal crystallized and stoichiometric ZnO thin film was observed at the oxygen partial pressure of 6.5Pa.


2006 ◽  
Vol 514-516 ◽  
pp. 1029-1033
Author(s):  
Eugenio Luís Solla ◽  
Jacinto P. Borrajo ◽  
Pio González ◽  
Julia Serra ◽  
Stefano Chiussi ◽  
...  

The bioactive properties of hydroxyapatite (HA) are well known in the implant industry and coatings of HA have been used to enhance the adhesion of living tissue to metal prostheses. Pulsed laser deposition (PLD) in a water vapour atmosphere is an appropriate method for the production of crystalline HA coatings. In this work the effect of RF plasma on thin films of HA grown by PLD at different substrate temperatures has been studied. The physicochemical properties of the films were studied by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS), showing that the incorporation of RF discharge in the deposition chamber can lead to changes in the crystallinity and deposition rate of the films but substrate temperature still plays the most important role.


2002 ◽  
Vol 16 (06n07) ◽  
pp. 825-829 ◽  
Author(s):  
TSUYOSHI YOSHITAKE ◽  
TAKASHI NISHIYAMA ◽  
TAKESHI HARA ◽  
KUNIHITO NAGAYAMA

Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The suitable oxygen atmosphere of 5 × 10-2 Torr can etch the sp2 bonding fractions preferentially. At substrate temperatures between 550°C and 650°C, single-phase diamond films consisting of diamond crystal with diameters of 1 - 5 μm could be grown. The results demonstrated that the diamond thin films can be grown homoepitaxially using PLD by controlling the deposition parameters, such as the oxygen pressure and the substrate temperature.


2000 ◽  
Vol 656 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
J. D. Demaree ◽  
Steven H. Mcknight

ABSTRACTBarium strontium titanate (BSTO) films were synthesized by the pulsed laser deposition technique (PLD) on silicon substrates at room temperature. The thin films were synthesized at ambient temperature and 30 mT oxygen partial pressure, with 300, 400 and 500 mJ/cm2 laser fluence at 5, 10 and 20 pulses per second on silicon wafer substrates. All films were subsequently post-annealed at 750°C in a continuous oxygen stream. The microstructure, crystallinity and lattice constant of the BSTO films were studied with the aid of atomic force microscopy (FEM) and Glancing Angle X-ray Diffraction analysis (GAXRD). The hardness and modulus of elasticity of the films were studied with the aid of a nanohardness indenter. The film stoichiometry was determined with the aid of Rutherford Backscattering Spectrometry (RBS). The results of this research will be combined with the results of our previous work [1, 2] on the effect of substrate temperature and oxygen partial pressure on the microstructure and properties of the BSTO films in order to construct a structural zone model (SZM) of the BSTO films synthesized by PLD.


2007 ◽  
Vol 336-338 ◽  
pp. 2215-2217
Author(s):  
Lian Meng Zhang ◽  
Yan Sheng Gong ◽  
Chuan Bin Wang ◽  
Qiang Shen

Highly conductive IrO2 thin films were prepared on Si (100) substrates by pulsed laser deposition technique from an iridium metal target in an oxygen ambient atmosphere. The effect of substrate temperature on the structure and electrical properties of IrO2 films was investigated. The deposited films at substrate temperatures ranging from 250 to 500°C under an oxygen pressure of 20Pa were pure polycrystalline tetragonal IrO2 and the preferential growth orientation changed with the substrate temperature. IrO2 films were well solidified with the fairly homogeneous thickness and exhibited a good adhesion with the substrate. The room-temperature resistivity of IrO2 films decreased with the increase of substrate temperature and the minimum resistivity of (42±6) μ-·cm was deposited at 500°C.


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