Dependence of nitrogen implantation by the PIII process at low energy on pressure and temperature

Vacuum ◽  
2005 ◽  
Vol 78 (2-4) ◽  
pp. 115-118 ◽  
Author(s):  
R. López-Callejas ◽  
R. Valencia-Alvarado ◽  
S.R. Barocio ◽  
A.E. Muñoz-Castro ◽  
A. Mercado-Cabrera ◽  
...  
Keyword(s):  
Low Energy ◽  
Nitrogen Implantation

Investigation of Coherence Time of a Nitrogen-Vacancy Center in Diamond Created by a Low-Energy Nitrogen Implantation

2017 ◽  
Vol 48 (6) ◽  
pp. 571-577 ◽  
Author(s):  
Chathuranga Abeywardana ◽  
Zaili Peng ◽  
Laura C. Mugica ◽  
Edward Kleinsasser ◽  
Kai-Mei C. Fu ◽  
...  
Keyword(s):  
Coherence Time ◽  
Low Energy ◽  
Nitrogen Vacancy ◽  
Nitrogen Implantation ◽  
Nitrogen Vacancy Center ◽  
Vacancy Center

Thin film SIMNI material formed by low energy nitrogen implantation and epitaxial growth

Vacuum ◽  
1991 ◽  
Vol 42 (16) ◽  
pp. 1068
Author(s):  
Lin Chenglu ◽  
Zou Shichang ◽  
Li Jinghua
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Low Energy ◽  
Nitrogen Implantation

Formation of Ultra-Thin Silicon Oxynitride Films by Low-Energy Nitrogen Implantation.

1995 ◽  
Vol 396 ◽  
Author(s):  
J. A. Diniz ◽  
P. J. Tatsch ◽  
L. C. Kretly ◽  
J. E. C. Queiroz ◽  
J. Godoy Fo
Keyword(s):  
Dielectric Constant ◽  
Ion Beams ◽  
Silicon Oxynitride ◽  
Low Energy ◽  
Nitrogen Implantation ◽  
Gate Insulators ◽  
Si Substrates ◽  
Mos Devices ◽  
Submicron Devices ◽  
Low Energies

AbstractOxynitrides (SiOxNy) have been used as gate insulators for submicron devices [1]. The present work reports the oxynitride formation at SiO2/Si structure by N2+ implantation at low energies. Si substrates were implanted with N2+ ion beams (energy = 5.6 keV and dose =1×10 ions/cm2), annealed at 950°C for 30 min in N2 ambient, oxidized at 950°C in O2 + 1% TCE environment and annealed at 950°C for 30 min in N2. After these process steps, the oxynitride formation was investigated by FTIR, SIMS and ellipsometric analysis. These physical characterizations revealed the presence of Si-0 and Si-N bonds. The film thicknesses and refractive indexes were 7 nm and 1.62, respectively. The dielectric constant = 4.39 and effective charge density = 7xl010 cm–2 were determined by C-V, indicating that the SiOxNy films formed are suitable gate insulators for MOS devices.

Influence of low energy–high flux nitrogen implantation on the oxidation behavior of AISI 304L austenitic stainless steel

2003 ◽  
Vol 94 (12) ◽  
pp. 7509 ◽  
Author(s):  
F. Pedraza ◽  
J. L. Grosseau-Poussard ◽  
G. Abrasonis ◽  
J. P. Rivière ◽  
J. F. Dinhut
Keyword(s):  
Stainless Steel ◽  
Austenitic Stainless Steel ◽  
Oxidation Behavior ◽  
Low Energy ◽  
High Flux ◽  
Nitrogen Implantation ◽  
Aisi 304L
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