Silicon doping and N2 annealing effects on Zn3N2 thin film transistors

Vacuum ◽  
2022 ◽  
pp. 110864
Author(s):  
Kaiwen Li ◽  
Dong Lin ◽  
Jinhua Ren ◽  
Qun Zhang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Silicon Doping ◽  
Annealing Effects ◽  
N2 Annealing

Annealing effects on the performances of Bismuth-doped Indium Zinc Oxide thin-film transistors

2019 ◽  
Vol 30 (14) ◽  
pp. 12929-12936
Author(s):  
Dong Lin ◽  
Xudong Zheng ◽  
Jianwen Yang ◽  
Kaiwen Li ◽  
Jingjing Shao ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide ◽  
Annealing Effects

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

2011 ◽  
Vol 519 (10) ◽  
pp. 3254-3258 ◽  
Author(s):  
Zijian Yuan ◽  
Xiaming Zhu ◽  
Xiong Wang ◽  
Xikun Cai ◽  
Bingpo Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
Annealing Effects

Annealing effects of anodized Al-based alloy for thin-film transistors

1998 ◽  
Vol 318 (1-2) ◽  
pp. 257-261 ◽  
Author(s):  
Toshiaki Arai ◽  
Hideo Iiyori
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Annealing Effects

Annealing effects on metal-ZnO interface for improvement performance of Thin-film Transistors

2015 ◽  
Vol 1731 ◽  
Author(s):  
Miguel A. Dominguez ◽  
Francisco Flores ◽  
Adan Luna ◽  
Salvador Alcantara ◽  
Javier Martinez ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Annealing Time ◽  
Thin Film Transistors ◽  
Ultrasonic Spray Pyrolysis ◽  
Electrical Performance ◽  
Zno Films ◽  
Low Temperature Annealing ◽  
Ultrasonic Spray ◽  
Annealing Effects

ABSTRACTIn this work, the annealing effects at 180°C in Aluminum-ZnO contacts as function of time were studied. Also, the application in TFTs of ZnO films obtained at low-temperature (200°C) are presented. The ZnO films obtained by ultrasonic Spray Pyrolysis at 200 °C were deposited over Aluminum contacts on SiO2/Si wafers to demonstrate the use of active layer in thin-film transistors. The results show that an improvement can be obtained in metal-ZnO interfaces by low-temperature annealing treatments. However, long annealing time degrade the metal-ZnO interface and may affect the electrical performance of the device.

Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors

2021 ◽  
Author(s):  
Byeong Hyeon Lee ◽  
Dae-Hwan Kim ◽  
Doo-Yong Lee ◽  
Sungkyun Park ◽  
Sangsig Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Performance ◽  
Silicon Doping

Pre-annealing Effects on Pentacene Organic Thin-film Transistors with Polymer Dielectric Surfaces

2012 ◽  
Vol 62 (11) ◽  
pp. 1208-1215
Author(s):  
Sula CHOI ◽  
Kyoungchul KIM ◽  
Hanju LEE ◽  
Sujin LEE ◽  
Kiejin LEE* ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Polymer Dielectric ◽  
Dielectric Surfaces ◽  
Annealing Effects
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