Annealing effects on metal-ZnO interface for improvement performance of Thin-film Transistors

2015 ◽  
Vol 1731 ◽  
Author(s):  
Miguel A. Dominguez ◽  
Francisco Flores ◽  
Adan Luna ◽  
Salvador Alcantara ◽  
Javier Martinez ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Annealing Time ◽  
Thin Film Transistors ◽  
Ultrasonic Spray Pyrolysis ◽  
Electrical Performance ◽  
Zno Films ◽  
Low Temperature Annealing ◽  
Ultrasonic Spray ◽  
Annealing Effects

ABSTRACTIn this work, the annealing effects at 180°C in Aluminum-ZnO contacts as function of time were studied. Also, the application in TFTs of ZnO films obtained at low-temperature (200°C) are presented. The ZnO films obtained by ultrasonic Spray Pyrolysis at 200 °C were deposited over Aluminum contacts on SiO2/Si wafers to demonstrate the use of active layer in thin-film transistors. The results show that an improvement can be obtained in metal-ZnO interfaces by low-temperature annealing treatments. However, long annealing time degrade the metal-ZnO interface and may affect the electrical performance of the device.

scholarly journals Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1761 ◽  
Author(s):  
Liaojun Wan ◽  
Fuchao He ◽  
Yu Qin ◽  
Zhenhua Lin ◽  
Jie Su ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Solution Process ◽  
Electrical Performance ◽  
Zno Films ◽  
Zno Thin Film ◽  
Chlorobenzoic Acid ◽  
Interfacial Modification ◽  
Temperature Solution

This paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. It was found that the ZnO TFTs with PCBA interfacial modification layers exhibited a higher electron mobility of 4.50 cm2 V−1 s−1 compared to the pristine ZnO TFTs with a charge carrier mobility of 2.70 cm2 V−1 s−1. Moreover, the ZnO TFTs with interfacial modification layers could significantly improve device shelf-life stability and bias stress stability compared to the pristine ZnO TFTs. Most importantly, interfacial modification layers could also decrease the contact potential barrier between the source/drain electrodes and the ZnO films when using high work-function metals such as Ag and Au. These results indicate that high performance TFTs can be obtained with a low temperature solution process with interfacial modification layers, which strongly implies further potential for their applications.

scholarly journals Evolution of electrical performance of ZnO-based thin-film transistors by low temperature annealing

AIP Advances ◽  
2012 ◽  
Vol 2 (2) ◽  
pp. 022118 ◽  
Author(s):  
J. Zhang ◽  
X. F. Li ◽  
J. G. Lu ◽  
P. Wu ◽  
J. Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Electrical Performance ◽  
Low Temperature Annealing

Indium Oxide Thin-Film Transistors Processed at Low Temperature via Ultrasonic Spray Pyrolysis

2014 ◽  
Vol 7 (1) ◽  
pp. 782-790 ◽  
Author(s):  
Hendrik Faber ◽  
Yen-Hung Lin ◽  
Stuart R. Thomas ◽  
Kui Zhao ◽  
Nikos Pliatsikas ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Spray Pyrolysis ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
Ultrasonic Spray Pyrolysis ◽  
Oxide Thin Film ◽  
Ultrasonic Spray ◽  
Indium Oxide Thin Film

High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing

2021 ◽  
Vol 42 (10) ◽  
pp. 1480-1483
Author(s):  
Yining Yu ◽  
Nannan Lv ◽  
Dongli Zhang ◽  
Yiran Wei ◽  
Mingxiang Wang
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Low Temperature Annealing ◽  
Amorphous Ingazno

Solution-processed oxide thin-film transistors using aluminum and nitrate precursors for low-temperature annealing

2011 ◽  
Vol 19 (9) ◽  
pp. 620 ◽  
Author(s):  
Woong Hee Jeong ◽  
Jung Hyeon Bae ◽  
Kyung Min Kim ◽  
Dong Lim Kim ◽  
You Seung Rim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Low Temperature Annealing

Low-Temperature Processed Flexible In–Ga–Zn–O Thin-Film Transistors Exhibiting High Electrical Performance

2011 ◽  
Vol 32 (12) ◽  
pp. 1692-1694 ◽  
Author(s):  
Shinhyuk Yang ◽  
Jun Yong Bak ◽  
Sung-Min Yoon ◽  
Min Ki Ryu ◽  
Himchan Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Electrical Performance

The effects of the microstructure of ZnO films on the electrical performance of their thin film transistors

2008 ◽  
Vol 93 (22) ◽  
pp. 222104 ◽  
Author(s):  
Byung-Il Hwang ◽  
Kyung Park ◽  
Ha-Suk Chun ◽  
Chee-Hong An ◽  
Hyoungsub Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Performance ◽  
Zno Films
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